NE3509M04-A

NE3509M04-A
Mfr. #:
NE3509M04-A
Manufacturer:
CEL
Description:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Lifecycle:
New from this manufacturer.
Datasheet:
NE3509M04-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Manufacturer
CEL
Product Category
Transistors - FETs, MOSFETs - Single
Mounting-Style
SMD/SMT
Package-Case
FTSMM-4 (M04)
Technology
GaAs
Transistor-Type
HFET
Gain
17.5 dB
Pd-Power-Dissipation
150 mW
Maximum-Operating-Temperature
+ 150 C
Operating-Frequency
2 GHz
Id-Continuous-Drain-Current
60 mA
Vds-Drain-Source-Breakdown-Voltage
4 V
Transistor-Polarity
N-Channel
Forward-Transconductance-Min
80 mS
Vgs-Gate-Source-Breakdown-Voltage
- 3 V
Gate-Source-Cutoff-Voltage
- 0.5 V
NF-Noise-Figure
0.4 dB
P1dB-Compression-Point
11 dBm
Tags
NE3509, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Small Signal GaAs FETs L to S Band Lo Noise Amplifier N-Ch HJFET
***et
Trans JFET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR HFET
***th Star Micro
AMP HJ-FET 2GHZ 4-SMINI
Part # Mfg. Description Stock Price
NE3509M04-A
DISTI # NE3509M04-A-ND
California Eastern Laboratories (CEL)FET RF 4V 2GHZ 4-SMINI
RoHS: Compliant
Min Qty: 120
Container: Bulk
Limited Supply - Call
    NE3509M04-A
    DISTI # 551-NE3509M04-A
    California Eastern Laboratories (CEL)RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
    RoHS: Compliant
    0
      Image Part # Description
      NE3508M04-EVNF23-A

      Mfr.#: NE3508M04-EVNF23-A

      OMO.#: OMO-NE3508M04-EVNF23-A

      RF Development Tools L to S band LNA Eval Brd
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      Mfr.#: NE3503M04T2A

      OMO.#: OMO-NE3503M04T2A-1190

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      Mfr.#: NE3503M04-T2-A

      OMO.#: OMO-NE3503M04-T2-A-CEL

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      Mfr.#: NE350184C

      OMO.#: OMO-NE350184C-CEL

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      Mfr.#: NE3503/EHX77Z1BT

      OMO.#: OMO-NE3503-EHX77Z1BT-1190

      New and Original
      NE3503M04 V75

      Mfr.#: NE3503M04 V75

      OMO.#: OMO-NE3503M04-V75-1190

      New and Original
      NE3505M04

      Mfr.#: NE3505M04

      OMO.#: OMO-NE3505M04-1190

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      NE3508M04

      Mfr.#: NE3508M04

      OMO.#: OMO-NE3508M04-1190

      New and Original
      NE3508M04-A-ND

      Mfr.#: NE3508M04-A-ND

      OMO.#: OMO-NE3508M04-A-ND-1190

      New and Original
      NE3509M04

      Mfr.#: NE3509M04

      OMO.#: OMO-NE3509M04-1190

      New and Original
      Availability
      Stock:
      Available
      On Order:
      4000
      Enter Quantity:
      Current price of NE3509M04-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
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