IXFK360N10T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-264-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

360 A

Rds On - Drain-Source Resistance:

2.9 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

525 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

1.25 kW

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Series:

IXFK360N10

Transistor Type:

1 N-Channel

Brand:

IXYS

Forward Transconductance - Min:

180 S

Fall Time:

160 ns

Product Type:

MOSFET

Rise Time:

100 ns

Factory Pack Quantity:

25

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

80 ns

Typical Turn-On Delay Time:

47 ns

Unit Weight:

0.264555 oz

Tags

IXFK36, IXFK3, IXFK, IXF