2SA1727TLQ

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Collector- Base Voltage VCBO:

400 V

Emitter- Base Voltage VEBO:

7 V

Maximum DC Collector Current:

0.5 A

Gain Bandwidth Product fT:

12 MHz

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

120

Height:

2.3 mm

Length:

6.5 mm

Packaging:

Reel

Width:

5.5 mm

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

120

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Tags

2SA1727TL, 2SA1727T, 2SA1727, 2SA172, 2SA17, 2SA1, 2SA