BSM120D12P2C005

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Discrete Semiconductor Modules

RoHS:

Y

Product:

Power Semiconductor Modules

Type:

SiC Power MOSFET

Vgs - Gate-Source Voltage:

- 6 V, 22 V

Mounting Style:

Screw Mount

Package / Case:

Module

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Series:

BSMx

Packaging:

Bulk

Configuration:

Half-Bridge

Height:

21.1 mm

Length:

122 mm

Width:

45.6 mm

Brand:

ROHM Semiconductor

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Typical Delay Time:

45 ns

Fall Time:

60 ns

Id - Continuous Drain Current:

134 A

Pd - Power Dissipation:

935 W

Product Type:

Discrete Semiconductor Modules

Rise Time:

50 ns

Factory Pack Quantity:

12

Subcategory:

Discrete Semiconductor Modules

Typical Turn-Off Delay Time:

170 ns

Typical Turn-On Delay Time:

45 ns

Vds - Drain-Source Breakdown Voltage:

1200 V

Vgs th - Gate-Source Threshold Voltage:

1.6 V

Part # Aliases:

BSM120D12P2C005

Unit Weight:

9.856004 oz

Tags

BSM1, BSM