IPAW60R280CEXKSA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220FP-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

19.3 A

Rds On - Drain-Source Resistance:

660 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

43 nC

Minimum Operating Temperature:

- 40 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

136 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

CoolMOS

Packaging:

Tube

Height:

16.15 mm

Length:

10.65 mm

Series:

CoolMOS CE

Transistor Type:

1 N-Channel

Width:

4.85 mm

Brand:

Infineon Technologies

Fall Time:

9 ns

Product Type:

MOSFET

Rise Time:

9 ns

Factory Pack Quantity:

450

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

71 ns

Typical Turn-On Delay Time:

11 ns

Part # Aliases:

IPAW60R280CE SP001391614

Unit Weight:

0.211644 oz

Tags

IPAW60R2, IPAW60R, IPAW6, IPAW, IPA