IRF3709ZLPBF

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

87 A

Rds On - Drain-Source Resistance:

7.8 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

17 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

79 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Transistor Type:

1 N-Channel

Type:

HEXFET Power MOSFET

Width:

4.5 mm

Brand:

Infineon / IR

Fall Time:

4.7 ns

Product Type:

MOSFET

Rise Time:

41 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

16 ns

Typical Turn-On Delay Time:

13 ns

Part # Aliases:

SP001574636

Unit Weight:

0.084199 oz

Tags

IRF3709Z, IRF3709, IRF370, IRF37, IRF3, IRF