RFD8P06LE

RFD8P06LE
Mfr. #:
RFD8P06LE
Manufacturer:
Rochester Electronics, LLC
Description:
Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
Lifecycle:
New from this manufacturer.
Datasheet:
RFD8P06LE Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Product Attribute
Attribute Value
Tags
RFD8P06L, RFD8P06, RFD8P0, RFD8P, RFD8, RFD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Part # Mfg. Description Stock Price
RFD8P06LESM9A
DISTI # RFD8P06LESM9A
ON Semiconductor- Bulk (Alt: RFD8P06LESM9A)
Min Qty: 1
Container: Bulk
Americas - 0
    RFD8P06LEFairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Not Compliant
    7200
    • 1000:$0.3000
    • 500:$0.3200
    • 100:$0.3300
    • 25:$0.3500
    • 1:$0.3700
    RFD8P06LEHarris SemiconductorPower Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
    RoHS: Not Compliant
    1753
    • 1000:$0.3000
    • 500:$0.3200
    • 100:$0.3300
    • 25:$0.3500
    • 1:$0.3700
    RFD8P06LESMHarris Semiconductor8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA10
    • 4:$1.2750
    • 1:$1.5300
    RFD8P06LESM9AFairchild Semiconductor CorporationPower Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    RoHS: Not Compliant
    4627
      Image Part # Description
      RFD8P05

      Mfr.#: RFD8P05

      OMO.#: OMO-RFD8P05

      MOSFET TO-251AA P-Ch Power
      RFD802

      Mfr.#: RFD802

      OMO.#: OMO-RFD802-1190

      New and Original
      RFD8P03

      Mfr.#: RFD8P03

      OMO.#: OMO-RFD8P03-1190

      New and Original
      RFD8P03LSM

      Mfr.#: RFD8P03LSM

      OMO.#: OMO-RFD8P03LSM-1190

      New and Original
      RFD8P05

      Mfr.#: RFD8P05

      OMO.#: OMO-RFD8P05-ON-SEMICONDUCTOR

      MOSFET P-CH 50V 8A I-PAK
      RFD8P05SM9A

      Mfr.#: RFD8P05SM9A

      OMO.#: OMO-RFD8P05SM9A-1190

      Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RFD8P06

      Mfr.#: RFD8P06

      OMO.#: OMO-RFD8P06-1190

      New and Original
      RFD8P06E

      Mfr.#: RFD8P06E

      OMO.#: OMO-RFD8P06E-1190

      Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
      RFD8P06ESM

      Mfr.#: RFD8P06ESM

      OMO.#: OMO-RFD8P06ESM-1190

      Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
      RFD8P06LESM

      Mfr.#: RFD8P06LESM

      OMO.#: OMO-RFD8P06LESM-1190

      8 A, 60 V, 0.33 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA
      Availability
      Stock:
      Available
      On Order:
      2500
      Enter Quantity:
      Current price of RFD8P06LE is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
      Reference price (USD)
      Quantity
      Unit Price
      Ext. Price
      1
      $0.00
      $0.00
      10
      $0.00
      $0.00
      100
      $0.00
      $0.00
      500
      $0.00
      $0.00
      1000
      $0.00
      $0.00
      Start with
      Newest Products
      • IO-Link™ Devices
        Maxim Integrated’s complete portfolio of IO-link devices integrate value-adding features to provide design flexibility and offload the local processor.
      • Large Diameter Clear Hole Spacers
        RAF's large diameter clear hole spacers for industrial applications are available in standard stock sizes, various materials and finishes, and custom options.
      • WE-ExB Series Common Mode Power Line Choke
        Wurth's WE-ExB series is the double core made of MnZn and NiZn. Its insertion loss has a range of effect over a broader frequency range than does a single NiZn or MnZn core.
      • CPI2-B1-REU Production Device Programmer
        Phyton's CPI2-B1-REU in-system programmer supports Renesas microcontrollers, memory devices, and MCUs from other manufacturers.
      • CFSH05-20L Schottky Diode
        Central Semiconductor's space saving, low profile Schottky diode for applications including DC-DC conversion and circuit protection.
      Top