SIHG120N60E-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247AC-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

25 A

Rds On - Drain-Source Resistance:

120 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

45 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

179 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

E

Transistor Type:

1 N-Channel

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

6 S

Fall Time:

33 ns

Product Type:

MOSFET

Rise Time:

65 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

31 ns

Typical Turn-On Delay Time:

19 ns

Tags

SIHG1, SIHG, SIH