IRFH5206TRPBF

IRFH5206TRPBF
Mfr. #:
IRFH5206TRPBF
メーカー:
Infineon / IR
説明:
MOSFET 60V SINGLE N-CH 6.7mOhms 40nC
ライフサイクル:
メーカー新製品
データシート:
IRFH5206TRPBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRFH5206TRPBF DatasheetIRFH5206TRPBF Datasheet (P4-P6)IRFH5206TRPBF Datasheet (P7-P9)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
PQFN-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
60 V
Id-連続ドレイン電流:
89 A
Rds On-ドレイン-ソース抵抗:
6.7 mOhms
Vgs th-ゲート-ソースしきい値電圧:
4 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
40 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
100 W
構成:
独身
チャネルモード:
強化
包装:
リール
高さ:
0.83 mm
長さ:
6 mm
トランジスタタイプ:
1 N-Channel
幅:
5 mm
ブランド:
インフィニオン/ IR
フォワード相互コンダクタンス-最小:
73 S
立ち下がり時間:
8.2 ns
製品タイプ:
MOSFET
立ち上がり時間:
11 ns
ファクトリーパックの数量:
4000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
22 ns
典型的なターンオン遅延時間:
6.4 ns
パーツ番号エイリアス:
SP001556276
Tags
IRFH5206, IRFH520, IRFH52, IRFH5, IRFH, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***trelec
MOSFET Operating temperature: -55...+150 °C Housing type: PQFN-8 (3x3) Polarity: N Variants: Enhancement mode Power dissipation: 100 W
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:89A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
*** Electronics
INFINEON IRFH5006TRPBF MOSFET Transistor, N Channel, 21 A, 60 V, 0.0035 ohm, 10 V, 4 VNew
***ure Electronics
Single N-Channel 60 V 4.1 mOhm 69 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PG-TDSON-8, RoHS
***(Formerly Allied Electronics)
MOSFET; 60V; 100A; 4.1mOhm; 67 nC Qg; PQFN5x6
***Yang
Trans MOSFET N-CH 60V 21A 8-Pin QFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***nell
MOSFET, N-CH, 60V, 21A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0035ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 3.6W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 3 - 168 hours; SVHC: No SVHC (27-Jun-2018)
***Yang
Trans MOSFET N-CH 60V 23A 8-Pin PQFN T/R - Product that comes on tape, but is not reeled
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a PQFN 5mm x 6mm package, PG-TDSON-8, RoHS
***ure Electronics
Single N-Channel 60 V 3.2 mOhm 110 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
*** Source Electronics
MOSFET N-CH 60V 23A 6-PQFN / Trans MOSFET N-CH Si 60V 23A 8-Pin PQFN EP T/R
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:100A; On Resistance Rds(On):0.0026Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.7V Rohs Compliant: Yes
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
***nell
MOSFET, N-CH, 60V, 100A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0026ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.7V; Power Dissipation Pd: -; Transistor Case Style: QFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ure Electronics
Single N-Channel 100 V 12.4 mOhm 48 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a PQFN package, PG-TDSON-8, RoHS
***Yang
Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R - Tape and Reel
***ineon
Benefits: RoHS Compliant | Target Applications: Battery Operated Drive; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:3.6W ;RoHS Compliant: Yes
***nell
MOSFET, N-CH, 100V, 63A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 63A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0103ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 114W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 12.4 / Gate-Source Voltage V = 20 / Fall Time ns = 6.4 / Rise Time ns = 9.6 / Turn-OFF Delay Time ns = 22 / Turn-ON Delay Time ns = 7.8 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = PQFN / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 114
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
***(Formerly Allied Electronics)
MOSFET 100V, Gen 10.7, 11.68 mOhm max, 56.2 nC Qg
***trelec
MOSFET PQFN-8 (5x6) N 100V 11 A
***et
Trans MOSFET N-CH 10V 11A 8-Pin QFN T/R
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET,N CH,100V,11A,PQFN56; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:100V; On Resistance Rds(on):10.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:114W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:63A; Power Dissipation Pd:114W; Voltage Vgs Max:20V
***(Formerly Allied Electronics)
MOSFET, 100V, 55A, 14.9 mOhm, 39 nC Qg, PQFN 5x6
***ernational Rectifier
100V Single N-Channel HEXFET Power MOSFET in a PQFN package
***ark
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0126ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2V ;RoHS Compliant: Yes
***ment14 APAC
MOSFET,N CH,100V,55A,PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:100V; On Resistance Rds(on):12.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.6W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:55A; Power Dissipation Pd:3.6W; Voltage Vgs Max:20V
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a 3mm X 3mm PQFN package
***(Formerly Allied Electronics)
MOSFET, 30V, 16A, 7.1 MOHM, 9.6 NC QG, PQFN33
***et
Trans MOSFET N-CH 30V 16A 8-Pin QFN T/R
***ment14 APAC
MOSFET, N CH, 30V, 16A, PQFN33; Transistor Polarity:N Channel; Continuous Drain Current Id:16A; Drain Source Voltage Vds:30V; On Resistance Rds(on):7.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:16mA; Package / Case:PQFN; Power Dissipation Pd:2.8W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V
モデル メーカー 説明 ストック 価格
IRFH5206TRPBF
DISTI # 27112190
Infineon Technologies AGTrans MOSFET N-CH 60V 16A 8-Pin PQFN EP T/R2480
  • 95:$0.6637
IRFH5206TRPBF
DISTI # IRFH5206TRPBFCT-ND
Infineon Technologies AGMOSFET N-CH 60V 16A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
760In Stock
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
IRFH5206TRPBF
DISTI # IRFH5206TRPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 60V 16A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
760In Stock
  • 500:$1.0112
  • 100:$1.3001
  • 10:$1.6180
  • 1:$1.7900
IRFH5206TRPBF
DISTI # IRFH5206TRPBFTR-ND
Infineon Technologies AGMOSFET N-CH 60V 16A 8-PQFN
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
Limited Supply - Call
    IRFH5206TRPBF
    DISTI # SP001556276
    Infineon Technologies AGTrans MOSFET N-CH 60V 16A 8-Pin QFN T/R (Alt: SP001556276)
    RoHS: Compliant
    Min Qty: 1
    Container: Tape and Reel
    Europe - 0
    • 1:€1.1559
    • 10:€0.9699
    • 25:€0.8099
    • 50:€0.7059
    • 100:€0.6919
    • 500:€0.6739
    • 1000:€0.6609
    IRFH5206TRPBF
    DISTI # 74R1490
    Infineon Technologies AGMOSFET Transistor,Transistor Polarity:N Channel,Continuous Drain Current Id:89A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,Power Dissipation Pd:3.6W RoHS Compliant: Yes2480
    • 1:$0.5310
    • 25:$0.5310
    • 50:$0.5310
    • 100:$0.5310
    • 250:$0.5310
    • 500:$0.5310
    • 1000:$0.5310
    IRFH5206TRPBF
    DISTI # 74R1491
    Infineon Technologies AGMOSFET Transistor, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:89A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0056ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2V,No. of Pins:8Pins RoHS Compliant: Yes4000
    • 1:$0.6610
    • 4000:$0.6360
    • 8000:$0.6110
    IRFH5206TRPBF
    DISTI # 70019274
    Infineon Technologies AGMOSFET,60V,87A,7mOhm,40 nC Qg,PQFN5x6
    RoHS: Compliant
    0
    • 4000:$0.7220
    • 8000:$0.7080
    • 20000:$0.6860
    IRFH5206TRPBF
    DISTI # 942-IRFH5206TRPBF
    Infineon Technologies AGMOSFET 60V SINGLE N-CH 6.7mOhms 40nC
    RoHS: Compliant
    0
      IRFH5206TRPBF
      DISTI # 2577225
      Infineon Technologies AGMOSFET, N-CH, 60V, 16A, PQFN-8
      RoHS: Compliant
      0
      • 4000:$1.3100
      • 12000:$1.2600
      IRFH5206TRPBF
      DISTI # 2577162
      Infineon Technologies AGMOSFET, N-CH, 60V, 16A, PQFN-8
      RoHS: Compliant
      0
      • 1:$2.8400
      • 10:$2.5600
      • 100:$2.0600
      • 500:$1.6100
      画像 モデル 説明
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      OMO.#: OMO-IRFH5250DTRPBF--1190

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      IRFH5204TRPBF.

      Mfr.#: IRFH5204TRPBF.

      OMO.#: OMO-IRFH5204TRPBF--1190

      ブランドニューオリジナル
      IRFH5206TRPBF.

      Mfr.#: IRFH5206TRPBF.

      OMO.#: OMO-IRFH5206TRPBF--1190

      ブランドニューオリジナル
      IRFH5210TRPBF.

      Mfr.#: IRFH5210TRPBF.

      OMO.#: OMO-IRFH5210TRPBF--1190

      Transistor Polarity:N Channel, Continuous Drain Current Id:55A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.0126ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Diss
      IRFH5250TRPBF

      Mfr.#: IRFH5250TRPBF

      OMO.#: OMO-IRFH5250TRPBF-INFINEON-TECHNOLOGIES

      MOSFET N-CH 25V 45A PQFN
      可用性
      ストック:
      Available
      注文中:
      5000
      数量を入力してください:
      IRFH5206TRPBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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