SIR878DP-T1-GE3

Product Attribute

Attribute Value

Manufacturer:

Vishay

Product Category:

MOSFET

RoHS:

E

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

PowerPAK-SO-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

40 A

Rds On - Drain-Source Resistance:

11.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

43 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

44.5 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

TrenchFET, PowerPAK

Packaging:

Reel

Height:

1.04 mm

Length:

6.15 mm

Series:

SIR

Transistor Type:

1 N-Channel

Width:

5.15 mm

Brand:

Vishay / Siliconix

Forward Transconductance - Min:

34 S

Fall Time:

10 ns

Product Type:

MOSFET

Rise Time:

11 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

28 ns

Typical Turn-On Delay Time:

9 ns

Part # Aliases:

SIR878DP-GE3

Unit Weight:

0.017870 oz

Tags

SIR878D, SIR878, SIR87, SIR8, SIR