BSS139H6327XT

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SOT-23-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

250 V

Id - Continuous Drain Current:

100 mA

Rds On - Drain-Source Resistance:

7.8 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.1 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

3.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

360 mW

Configuration:

Single

Channel Mode:

Depletion

Qualification:

AEC-Q101

Packaging:

Reel

Height:

1.1 mm

Length:

2.9 mm

Product:

MOSFET Small Signal

Series:

BSS139

Transistor Type:

1 N-Channel

Width:

1.3 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

60 mS

Fall Time:

182 ns

Product Type:

MOSFET

Rise Time:

5.4 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

29 ns

Typical Turn-On Delay Time:

5.8 ns

Part # Aliases:

BSS139 BSS139H6327XTSA1 H6327 SP000702610

Unit Weight:

0.000282 oz

Tags

BSS139H6327X, BSS139H63, BSS139H, BSS139, BSS13, BSS1, BSS