IPI041N12N3 G

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-262-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

120 V

Id - Continuous Drain Current:

120 A

Rds On - Drain-Source Resistance:

3.2 mOhms

Vgs th - Gate-Source Threshold Voltage:

2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

211 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

300 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Tube

Height:

9.45 mm

Length:

10.2 mm

Series:

OptiMOS 3

Transistor Type:

1 N-Channel

Width:

4.5 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

83 S

Fall Time:

21 ns

Product Type:

MOSFET

Rise Time:

52 ns

Factory Pack Quantity:

500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

70 ns

Typical Turn-On Delay Time:

35 ns

Part # Aliases:

IPI041N12N3GAKSA1 IPI41N12N3GXK SP000652748

Unit Weight:

0.084199 oz

Tags

IPI041N12N3G, IPI041, IPI04, IPI0, IPI