ZTX855

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

150 V

Collector- Base Voltage VCBO:

250 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

210 mV

Maximum DC Collector Current:

4 A

Gain Bandwidth Product fT:

90 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

ZTX855

Height:

4.01 mm

Length:

4.77 mm

Packaging:

Bulk

Width:

2.41 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

4 A

Pd - Power Dissipation:

1.2 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

4000

Subcategory:

Transistors

Unit Weight:

0.016000 oz

Tags

ZTX855, ZTX85, ZTX8, ZTX