APT45GP120J

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

IGBT Transistors

RoHS:

Y

Technology:

Si

Package / Case:

SOT-227-4

Mounting Style:

Chassis Mount

Configuration:

N-Channel

Collector- Emitter Voltage VCEO Max:

1.2 kV

Collector-Emitter Saturation Voltage:

3.3 V

Maximum Gate Emitter Voltage:

20 V

Continuous Collector Current at 25 C:

34 A

Pd - Power Dissipation:

329 W

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Packaging:

Tube

Continuous Collector Current Ic Max:

75 A

Height:

9.6 mm

Length:

38.2 mm

Operating Temperature Range:

- 55 C to + 150 C

Width:

25.4 mm

Brand:

Microchip / Microsemi

Continuous Collector Current:

75 A

Gate-Emitter Leakage Current:

100 nA

Product Type:

IGBT Transistors

Factory Pack Quantity:

1

Subcategory:

IGBTs

Tradename:

POWER MOS 7 IGBT, ISOTOP

Unit Weight:

1.058219 oz

Tags

APT45GP120J, APT45GP, APT45G, APT45, APT4, APT