IXTY18P10T

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

18 A

Rds On - Drain-Source Resistance:

120 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

15 V

Qg - Gate Charge:

39 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

83 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Series:

IXTY18P10

Transistor Type:

1 P-Channel

Brand:

IXYS

Forward Transconductance - Min:

13 S

Fall Time:

22 ns

Product Type:

MOSFET

Rise Time:

26 ns

Factory Pack Quantity:

70

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

44 ns

Typical Turn-On Delay Time:

19 ns

Unit Weight:

0.081130 oz

Tags

IXTY18, IXTY1, IXTY, IXT