FDMS0302S

FDMS0302S
Mfr. #:
FDMS0302S
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET PT8 30V/20V NCH ERTREN
ライフサイクル:
メーカー新製品
データシート:
FDMS0302S データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
オン・セミコンダクター
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
Power-56-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
30 V
Id-連続ドレイン電流:
29 A
Rds On-ドレイン-ソース抵抗:
1.5 mOhms
Vgs th-ゲート-ソースしきい値電圧:
1.7 V
Vgs-ゲート-ソース間電圧:
20 V
Qg-ゲートチャージ:
78 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
1.5 W
構成:
独身
チャネルモード:
強化
商標名:
PowerTrench SyncFET
包装:
リール
高さ:
1.1 mm
長さ:
6 mm
シリーズ:
FDMS0302S
トランジスタタイプ:
2 N-channel
幅:
5 mm
ブランド:
オン・セミコンダクター/フェアチャイルド
フォワード相互コンダクタンス-最小:
181 S
立ち下がり時間:
5 ns
製品タイプ:
MOSFET
立ち上がり時間:
8 ns
ファクトリーパックの数量:
3000
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
43 ns
典型的なターンオン遅延時間:
20 ns
単位重量:
0.002402 oz
Tags
FDMS030, FDMS03, FDMS0, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH Si 30V 29A 8-Pin PQFN EP T/R
***r Electronics
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0302S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
N-Channel 30 V 28 A 1.9 mO Surface Mount PowerTrench SyncFET Mosfet - Power 56
*** Stop Electro
Power Field-Effect Transistor, 29A I(D), 30V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***nell
MOSFET, N CH, 30V, 49A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:49A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0015ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Power Dissipation Pd:89W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
The FDMS7658AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Curr
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 50A; 2mohm @ 10V; PowerPAK SO-8
***nell
MOSFET, 30V, 50A, PPAKSO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.00165ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:50W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***ure Electronics
N-Channel 30V 31A (Ta), 49A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount 8-PQFN (5x6)
***ical
Trans MOSFET N-CH Si 30V 31A 8-Pin PQFN EP T/R
*** Stop Electro
Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0300S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
***ure Electronics
Single N-Channel 30 V 60 A 83 W 1.8 mOhm Power Mosfet - PowerPak-SO-8
***ment14 APAC
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Source Voltage Vds:30V; On Resistance
***nell
MOSFET, N-CH, 30V, 60A, POWERPAK SO; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.00145ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.5V; Power Dissipation Pd: 83W; Transistor Case Style: PowerPAK SO; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
***Yang
Trans MOSFET N-CH 30V 26A 8-Pin Power 56 T/R - Tape and Reel
*** Stop Electro
Power Field-Effect Transistor, 26A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
The FDMS0306AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.
***ark
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Cu
***(Formerly Allied Electronics)
Semiconcuctor; Mosfet; TrenchFET; N-Channel; 30V; 40A; 2.15mohm @ 10V; PowerPAK 1212-8
***nell
MOSFET, 30V, 40A, PPAK1212-8; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0018ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:52W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK 1212; No. of Pins:8; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
モデル メーカー 説明 ストック 価格
FDMS0302S
DISTI # 31295237
ON SemiconductorPT8 30V/20V NCH POWERTRENCH SY15000
  • 3000:$0.4514
FDMS0302S
DISTI # FDMS0302SCT-ND
ON SemiconductorMOSFET N-CH 30V 29A
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS0302S
    DISTI # FDMS0302SDKR-ND
    ON SemiconductorMOSFET N-CH 30V 29A
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS0302S
      DISTI # FDMS0302STR-ND
      ON SemiconductorMOSFET N-CH 30V 29A
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.5478
      FDMS0302S
      DISTI # FDMS0302S
      ON SemiconductorTrans MOSFET N-CH 30V 29A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS0302S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.4639
      • 6000:$0.4609
      • 12000:$0.4559
      • 18000:$0.4499
      • 30000:$0.4389
      FDMS0302S
      DISTI # 68X0367
      ON SemiconductorPT8 30V/20V NCH ERTREN / REEL0
      • 1:$0.7120
      FDMS0302SFairchild Semiconductor Corporation 
      RoHS: Not Compliant
      66000
      • 1000:$0.5300
      • 500:$0.5500
      • 100:$0.5800
      • 25:$0.6000
      • 1:$0.6500
      FDMS0302S
      DISTI # 512-FDMS0302S
      ON SemiconductorMOSFET PT8 30V/20V NCH ERTREN
      RoHS: Compliant
      2834
      • 1:$1.1700
      • 10:$0.9960
      • 100:$0.7650
      • 500:$0.6760
      • 1000:$0.5340
      • 3000:$0.4740
      • 9000:$0.4560
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      Mfr.#: XAL1010-103MEB

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      可用性
      ストック:
      Available
      注文中:
      1985
      数量を入力してください:
      FDMS0302Sの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
      参考価格(USD)
      単価
      小計金額
      1
      $1.17
      $1.17
      10
      $1.00
      $9.96
      100
      $0.76
      $76.50
      500
      $0.68
      $338.00
      1000
      $0.53
      $534.00
      2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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