NTH027N65S3F-F155

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

75 A

Rds On - Drain-Source Resistance:

23 mOhms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

259 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

595 W

Configuration:

Single

Tradename:

SuperFET III

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

ON Semiconductor

Fall Time:

34 ns

Product Type:

MOSFET

Rise Time:

47 ns

Factory Pack Quantity:

450

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

131 ns

Typical Turn-On Delay Time:

49 ns

Tags

NTH0, NTH