IXFH110N15T2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

150 V

Id - Continuous Drain Current:

150 A

Rds On - Drain-Source Resistance:

13 mOhms

Vgs th - Gate-Source Threshold Voltage:

4.5 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

150 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

480 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

HiPerFET

Packaging:

Tube

Product:

MOSFET Power

Series:

IXFH110N15T2

Transistor Type:

1 N-Channel

Type:

Power MOSFET

Brand:

IXYS

Forward Transconductance - Min:

115 S

Fall Time:

18 ns

Product Type:

MOSFET

Rise Time:

16 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

33 ns

Typical Turn-On Delay Time:

33 ns

Unit Weight:

0.229281 oz

Tags

IXFH110, IXFH11, IXFH1, IXFH, IXF