CSD75205W1015

Product Attribute

Attribute Value

Manufacturer:

Texas Instruments

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DSBGA-6

Number of Channels:

2 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

1.2 A

Rds On - Drain-Source Resistance:

95 mOhms

Vgs - Gate-Source Voltage:

6 V

Qg - Gate Charge:

1.6 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

750 mW (3/4 W)

Configuration:

Dual

Tradename:

NexFET

Packaging:

Reel

Height:

0.625 mm

Length:

1.5 mm

Series:

CSD75205W1015

Transistor Type:

2 P-Channel

Width:

1 mm

Brand:

Texas Instruments

Forward Transconductance - Min:

5 S

Fall Time:

17 ns

Product Type:

MOSFET

Rise Time:

5.3 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

6.3 ns

Unit Weight:

0.000060 oz

Tags

CSD7520, CSD752, CSD75, CSD7, CSD