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FDP8447L

FDP8447L
Mfr. #:
FDP8447L
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 40V N-CH PowerTrench MOSFET
ライフサイクル:
メーカー新製品
データシート:
FDP8447L データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDP8447L 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
スルーホール
パッケージ/ケース：
TO-220-3
チャネル数：
1 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
40 V
Id-連続ドレイン電流：
12 A
Rds On-ドレイン-ソース抵抗：
8.7 mOhms
Vgs-ゲート-ソース間電圧：
20 V
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
Pd-消費電力：
2 W
構成：
独身
チャネルモード：
強化
商標名：
PowerTrench
包装：
チューブ
高さ：
16.3 mm
長さ：
10.67 mm
シリーズ：
FDP8447L
トランジスタタイプ：
1 N-Channel
幅：
4.7 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
立ち下がり時間：
4 ns
製品タイプ：
MOSFET
立ち上がり時間：
7 ns
ファクトリーパックの数量：
800
サブカテゴリ：
MOSFET
典型的なターンオフ遅延時間：
28 ns
典型的なターンオン遅延時間：
9 ns
単位重量：
0.063493 oz
Tags
FDP84, FDP8, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
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***ure Electronics
N-Channel 40 V 8.7 mOhm PowerTrench® Mosfet - TO-220
***emi
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*** Stop Electro
Power Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
N-CHANNEL POWERTRENCH MOSFET; Transistor Type:MOSFET; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench technology to deliver low rDS(on) and optimized BVDSS capability to offer superior performance benefit in the application.
***ment14 APAC
MOSFET, N CH, 40V, 50A, TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:40V; On Resistance Rds(on):8.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.7V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; Package / Case:TO-220; Power Dissipation Pd:2W; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:1.7V; Voltage Vgs Rds on Measurement:10V
***ure Electronics
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***ineon SCT
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***Yang
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***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance
***ark
MOSFET, N, 30V, TO-220AB; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:87A; Resistance, Rds On:0.0063ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:2.25V; Case Style:TO-220AB; ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, 30V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:87A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.25V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3709; Current Id Max:87A; N-channel Gate Charge:17nC; Package / Case:TO-220AB; Power Dissipation Pd:79W; Power Dissipation Pd:79mW; Pulse Current Idm:350A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
***p One Stop Global
Trans MOSFET N-CH 30V 80A 3-Pin(3+Tab) TO-220AB Tube
***r Electronics
Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ment14 APAC
MOSFET, N, 3-TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:75W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:80A; Package / Case:TO-220; Power Dissipation Pd:75W; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V
***rchild Semiconductor
This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
***i-Key
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***ser
MOSFETs- Power and Small Signal 30V 75A N-Channel
***el Electronic
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***et
Trans MOSFET N-CH 30V 75A 3-Pin(3+Tab) TO-220AB Rail
***ser
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***el Electronic
MOSFET N-CH 30V 75A TO220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 40V;RDS(ON) 0.009Ohm;ID 100A;TO-220AB;PD 170W;VGS +/-20V
***eco
Transistor MOSFET Negative Channel 40 Volt 100A 3-Pin(3+Tab) TO-220AB
***ure Electronics
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***ineon SCT
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***Yang
Trans MOSFET N-CH 40V 100A 3-Pin(3+Tab) TO-220AB - Rail/Tube
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***ment14 APAC
MOSFET, N, 40V, 100A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:100A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; No. of Transistors:1; On State resistance @ Vgs = 10V:9mohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:400A; Termination Type:Through Hole; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
***ineon SCT
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***ure Electronics
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***p One Stop
Trans MOSFET N-CH Si 40V 123A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***nell
MOSFET, N-CH, 40V, 118A, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0026ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:99W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ineon
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: AC-DC; Battery Operated Drive; Consumer Full-Bridge; Full-Bridge; Push-Pull
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
モデル メーカー 説明 ストック 価格
FDP8447L
DISTI # FDP8447L-ND		ON SemiconductorMOSFET N-CH 40V 12A TO-220
RoHS: Compliant
Min Qty: 1
Container: Tube		1020In Stock
  • 1600:$0.6641
  • 800:$0.7350
  • 100:$1.0847
  • 10:$1.3730
  • 1:$1.5500
FDP8447L
DISTI # FDP8447L		ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L)
RoHS: Compliant
Min Qty: 1600
Container: Tube		Asia - 0
    FDP8447L
    DISTI # FDP8447L    		ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube - Rail/Tube (Alt: FDP8447L)
    RoHS: Compliant
    Min Qty: 1600
    Container: Tube    		Americas - 0
    • 1600:$0.4569
    • 3200:$0.4539
    • 4800:$0.4479
    • 8000:$0.4429
    • 16000:$0.4319
    FDP8447L
    DISTI # FDP8447L    		ON SemiconductorTrans MOSFET N-CH 40V 12A 3-Pin(3+Tab) TO-220AB Tube (Alt: FDP8447L)
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		Europe - 0
    • 1:€0.7759
    • 10:€0.6889
    • 25:€0.6199
    • 50:€0.5639
    • 100:€0.5169
    • 500:€0.4769
    • 1000:€0.4429
    FDP8447L
    DISTI # 52M3195    		ON SemiconductorN CHANNEL MOSFET, 40V, 12A, TO-220,Transistor Polarity:N Channel,Continuous Drain Current Id:12A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0077ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,MSL:- RoHS Compliant: Yes0
    • 1:$1.4500
    • 10:$1.1300
    • 100:$0.8870
    • 1000:$0.6050
    • 2000:$0.6010
    • 10000:$0.5690
    • 24000:$0.5530
    • 50000:$0.5410
    FDP8447L
    DISTI # 512-FDP8447L    		ON SemiconductorMOSFET 40V N-CH PowerTrench MOSFET
    RoHS: Compliant    		1402
    • 1:$1.3300
    • 10:$1.1300
    • 100:$0.8660
    • 500:$0.7650
    • 1000:$0.6040
    FDP8447LFairchild Semiconductor CorporationPower Field-Effect Transistor, 50A I(D), 40V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		8000
    • 1000:$0.7600
    • 500:$0.8000
    • 100:$0.8400
    • 25:$0.8700
    • 1:$0.9400
    画像 モデル 説明
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    OMO.#: OMO-2N5088

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    OMO.#: OMO-LM7805CT-NOPB

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    RS01A1R000FE70

    Mfr.#: RS01A1R000FE70

    OMO.#: OMO-RS01A1R000FE70

    		 Wirewound Resistors - Through Hole 1watt 1ohms 1%
    C310T-SC-2-R-TR1

    Mfr.#: C310T-SC-2-R-TR1

    OMO.#: OMO-C310T-SC-2-R-TR1

    		 Cartridge Fuses 2A 250V high I2t ceramic
    RS01A1R200FE70

    Mfr.#: RS01A1R200FE70

    OMO.#: OMO-RS01A1R200FE70-1098

    		 Wirewound Resistors - Through Hole 1watt 1.2ohms 1%
    RS01A1R000FE70

    Mfr.#: RS01A1R000FE70

    OMO.#: OMO-RS01A1R000FE70-VISHAY-DALE

    		 Wirewound Resistors - Through Hole 1watt 1ohms 1%
    VS-12TQ040-M3

    Mfr.#: VS-12TQ040-M3

    OMO.#: OMO-VS-12TQ040-M3-VISHAY

    		 DIODE SCHOTTKY 40V 15A TO220AC
    LM7805CT/NOPB

    Mfr.#: LM7805CT/NOPB

    OMO.#: OMO-LM7805CT-NOPB-TEXAS-INSTRUMENTS

    		 Linear Voltage Regulators 5 Volt Reg
    2N5088

    Mfr.#: 2N5088

    OMO.#: OMO-2N5088-CENTRAL-SEMICONDUCTOR

    		 TRANS NPN 30V 0.05A TO92
    可用性
    ストック:
    Available
    注文中:
    1984
    数量を入力してください:
    FDP8447Lの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $1.33
    $1.33
    10
    $1.13
    $11.30
    100
    $0.87
    $86.60
    500
    $0.76
    $382.50
    1000
    $0.60
    $604.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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