SIHF30N60E-GE3

Mfr. #:: SIHF30N60E-GE3
メーカー:: Vishay
説明:: RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS
ライフサイクル:: メーカー新製品
データシート:: SIHF30N60E-GE3 データシート
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詳しくは:: SIHF30N60E-GE3 詳しくは

製品属性
属性値

Tags: SIHF3, SIHF, SIH

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIHF30N60E-GE3 説明

***Components: In a Pack of 2, N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220FP Vishay SiHF30N60E-GE3

***ure Electronics: E Series N Channel 600 V 0.125 O 130 nC Flange Mount Power Mosfet - TO-220FP

***p One Stop Global: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220 Full-Pak

***ical: Trans MOSFET N-CH 600V 29A 3-Pin(3+Tab) TO-220FP

***et Europe: Trans MOSFET N-CH 600V 29A 3-Pin TO-220FP

***ark: MOSFET, N-CH, 600V, 21A, TO-220FP

***i-Key: MOSFET N-CH 600V 29A TO220

***: 600V N-CHANNEL

***nell: MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:37W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:MSL 1 - Unlimited

***ment14 APAC: Prices include import duty and tax. MOSFET, N-CH, 600V, 21A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.104ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:37W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C

SIHF30N60E-GE3 詳しくは

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

E Series High Voltage MOSFETs: Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.

Market price

モデル	メーカー	説明	ストック	価格
SIHF30N60E-GE3 DISTI # SIHF30N60E-GE3-ND	Vishay Siliconix	MOSFET N-CH 600V 29A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	1820In Stock	1000:$3.3880 500:$4.0172 100:$4.9610 10:$6.0500 1:$6.7800
SIHF30N60E-GE3 DISTI # SIHF30N60E-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 600V 29A 3-Pin TO-220FP - Tape and Reel (Alt: SIHF30N60E-GE3) RoHS: Not Compliant Min Qty: 1000 Container: Reel	Americas - 0	1000:$3.1900 2000:$3.0900 4000:$2.8900 6000:$2.7900 10000:$2.7900
SIHF30N60E-GE3 DISTI # 19X1937	Vishay Intertechnologies	Power MOSFET, N Channel, 29 A, 600 V, 0.104 ohm, 10 V, 2 V RoHS Compliant: Yes	1313	1:$6.1700 10:$5.1100 25:$4.8100 50:$4.5100 100:$4.2100 500:$3.6600
SIHF30N60E-GE3 DISTI # 78-SIHF30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	470	1:$6.1700 10:$5.1100 100:$4.2100 250:$4.0800 500:$3.6600
SIHF30N60E-E3 DISTI # 781-SIHF30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	195	1:$6.1700 10:$5.1100 100:$4.2100
SIHF30N60E-GE3 DISTI # 9034490P	Vishay Intertechnologies	MOSFET 600V 29A E SERIES TO-220FP, TU	996	10:£4.1700 40:£3.6500 100:£3.4100 200:£3.2550
SIHF30N60EGE3	Vishay Intertechnologies	Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	Europe - 1000
SIHF30N60E-GE3 DISTI # 2364079	Vishay Intertechnologies	MOSFET, N-CH, 600V, 21A, TO-220FP RoHS: Compliant	1713	1:£4.7800 10:£3.6900 100:£3.2200 250:£3.1200 500:£2.8000
SIHF30N60E-GE3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	Americas -
SIHF30N60E-E3	Vishay Intertechnologies	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK RoHS: Compliant	Americas -
SIHF30N60E-GE3 DISTI # 2364079	Vishay Intertechnologies	MOSFET, N-CH, 600V, 21A, TO-220FP RoHS: Compliant	1313	1:$9.7700 10:$8.0900 100:$6.6600 250:$6.4600 500:$5.8000

画像	モデル	説明
	Mfr.#: SIHF30N60E-GE3 OMO.#: OMO-SIHF30N60E-GE3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF30N60E-E3 OMO.#: OMO-SIHF30N60E-E3	MOSFET 600V Vds 30V Vgs TO-220 FULLPAK
	Mfr.#: SIHF30N60E-E3 OMO.#: OMO-SIHF30N60E-E3-126	IGBT Transistors MOSFET 600V 125mOhm@10V 29A N-Ch E-SRS
	Mfr.#: SIHF30N60E-GE3 OMO.#: OMO-SIHF30N60E-GE3-VISHAY	RF Bipolar Transistors MOSFET 600V 125mOhms@10V 29A N-Ch E-SRS

SIHF30N60E-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes