IKA08N65F5XKSA1

IKA08N65F5XKSA1
Mfr. #:
IKA08N65F5XKSA1
メーカー:
Infineon Technologies
説明:
IGBT Transistors IGBT PRODUCTS
ライフサイクル:
メーカー新製品
データシート:
IKA08N65F5XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
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ECAD Model:
詳しくは:
IKA08N65F5XKSA1 詳しくは
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO-220FP-3
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
650 V
コレクター-エミッター飽和電圧:
1.6 V
最大ゲートエミッタ電圧:
20 V
25℃での連続コレクタ電流:
10.8 A
Pd-消費電力:
31.2 W
最低動作温度:
- 40 C
最高作動温度:
+ 175 C
シリーズ:
TRENCHSTOP 5 F5
包装:
チューブ
ブランド:
インフィニオンテクノロジーズ
ゲートエミッタリーク電流:
100 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
500
サブカテゴリ:
IGBT
商標名:
トレンチストップ
パーツ番号エイリアス:
IKA08N65F5 SP000973414
単位重量:
0.211644 oz
Tags
IKA08N65F, IKA08, IKA0, IKA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP Tube
***p One Stop Japan
Trans IGBT Chip N-CH 650V 10.8A 3-Pin(3+Tab) TO-220FP
***et Europe
Trans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube
***ark
Igbt Single Transistor, 8 A, 1.6 V, 31.2 W, 650 V, To-220, 3
***i-Key
IGBT 650V 10.8A 31.2W TO220-3
***ronik
IGBT 650V 8A 1,6V TO220FP-3
***ment14 APAC
IGBT, 650V, 8A, TO220-3
***ukat
650V 10,8A 31,2W TO220-Fullpak
***nell
IGBT, 650V, 8A, TO220-3; Corrente di Collettore CC:8A; Tensione Saturaz Collettore-Emettitore Vce(on):1.6V; Dissipazione di Potenza Pd:31.2W; Tensione Collettore-Emettitore V(br)ceo:650V; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 5 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018); Temperatura di Esercizio Min:-40°C; Tipo di Transistor:IGBT
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
TRENCHSTOP™ 5 IGBTs
Infineon TRENCHSTOP™ 5 IGBTs are the next generation of thin wafer IGBT (Insulated Gate Bipolar Transistor) that feature significantly lower conduction and switching losses compared to currently leading solutions. TRENCHSTOP 5 is designed for applications where switching >10kHz. The wafer thickness has been reduced by >25%, which enables a dramatic improvement in both switching and conduction losses, while providing a breakthrough voltage of 650V. This quantum leap in efficiency opens up new opportunities for designers to explore.
TRENCHSTOP™ 5 F5 Discrete IGBTs
Infineon TRENCHSTOP™ 5 F5 Discrete IGBTs are optimized for switching >60kHz to deliver optimum efficiency, bridging the gap between MOSFETs and IGBTs. The F5 series features significantly lower switching losses compared to currently leading solutions. Targeting topologies are boost stages, PFC (AC-DC) stages and high voltage DC-DC topologies commonly found in applications like Uninterruptible Power Supplies, UPS, Inverterized Welding Machines and Switch Mode Power Supplies (SMPS). The 650V TRENCHSTOP™ 5 F5 IGBTs are targeted for low inductance designs in combination with SiC diodes to offer 1% higher efficiency compared to 650V TRENCHSTOP™ 5 H5 family. The F5 products require higher design in effort, but rewards are higher.
モデル メーカー 説明 ストック 価格
IKA08N65F5XKSA1
DISTI # IKA08N65F5XKSA1-ND
Infineon Technologies AGIGBT 650V 10.8A 31.2W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
416In Stock
  • 1000:$0.8803
  • 500:$1.0624
  • 100:$1.2931
  • 10:$1.6090
  • 1:$1.7900
IKA08N65F5XKSA1
DISTI # IKA08N65F5XKSA1
Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube - Rail/Tube (Alt: IKA08N65F5XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.0199
  • 1000:$0.9829
  • 2000:$0.9469
  • 3000:$0.9159
  • 5000:$0.8989
IKA08N65F5XKSA1
DISTI # SP000973414
Infineon Technologies AGTrans IGBT Chip N-CH 650V 10.8A 3-Pin TO-220 Tube (Alt: SP000973414)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 1:€1.1109
  • 10:€1.0099
  • 25:€0.9259
  • 50:€0.8879
  • 100:€0.8539
  • 500:€0.8229
  • 1000:€0.7929
IKA08N65F5XKSA1
DISTI # 726-IKA08N65F5XKSA1
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
387
  • 1:$1.7100
  • 10:$1.4500
  • 100:$1.1600
  • 500:$1.0200
  • 1000:$0.8390
  • 2500:$0.7810
  • 5000:$0.7520
  • 10000:$0.7230
IKA08N65F5
DISTI # 726-IKA08N65F5-ES
Infineon Technologies AGIGBT Transistors ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
RoHS: Compliant
489
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1900
  • 500:$1.0400
  • 1000:$0.8600
  • 2500:$0.8000
  • 5000:$0.7700
  • 10000:$0.7400
IKA08N65F5XKSA1Infineon Technologies AGInsulated Gate Bipolar Transistor, 10.8A I(C), 650V V(BR)CES, N-Channel
RoHS: Compliant
500
  • 1000:$0.9400
  • 500:$0.9900
  • 100:$1.0300
  • 25:$1.0800
  • 1:$1.1600
IKA08N65F5XKSA1
DISTI # IKA08N65F5
Infineon Technologies AG650V 10,8A 31,2W TO220-Fullpak
RoHS: Compliant
345
  • 1:€4.9400
  • 10:€1.9400
  • 50:€0.9400
  • 100:€0.8600
IKA08N65F5XKSA1
DISTI # 2363281
Infineon Technologies AGIGBT, 650V, 8A, TO220-3
RoHS: Compliant
0
  • 5:£1.1900
  • 25:£1.0900
  • 100:£0.8780
  • 250:£0.8250
  • 500:£0.7720
画像 モデル 説明
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Mfr.#: IHW25N120E1XKSA1

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Mfr.#: AT27C256R-70PU

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Mfr.#: SFH617A-2

OMO.#: OMO-SFH617A-2-VISHAY-SEMI-OPTO

Transistor Output Optocouplers Phototransistor Out Single CTR 63-125%
RS0051R900FB12

Mfr.#: RS0051R900FB12

OMO.#: OMO-RS0051R900FB12-1098

Wirewound Resistors - Through Hole 5watts 1.9ohms 1%
IRGB4060DPBF

Mfr.#: IRGB4060DPBF

OMO.#: OMO-IRGB4060DPBF-INFINEON-TECHNOLOGIES

IGBT Transistors 600V UltraFast Trench IGBT
可用性
ストック:
385
注文中:
2368
数量を入力してください:
IKA08N65F5XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$2.08
$2.08
10
$1.77
$17.70
100
$1.41
$141.00
500
$1.24
$620.00
1000
$1.02
$1 020.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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