FDS3890

Mfr. #:: FDS3890
メーカー:: ON Semiconductor
説明:: MOSFET 2N-CH 80V 4.7A 8-SO
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データシート:: FDS3890 データシート
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製品属性
属性値

メーカー: フェアチャイルドセミコンダクター

製品カテゴリ: FET-アレイ

シリーズ: PowerTrenchR

包装: Digi-ReelR代替パッケージ

パーツエイリアス: FDS3890_NL

単位重量: 0.006596 oz

取り付けスタイル: SMD / SMT

パッケージ-ケース: 8-SOIC (0.154", 3.90mm Width)

テクノロジー: Si

作動温度: -55°C ~ 175°C (TJ)

取付タイプ: 表面実装

チャネル数: 2 Channel

サプライヤー-デバイス-パッケージ: 8-SOIC

構成: デュアルデュアルドレイン

FETタイプ: 2 N-Channel (Dual)

パワーマックス: 900mW

トランジスタタイプ: 2 N-Channel

Drain-to-Source-Voltage-Vdss: 80V

入力-静電容量-Ciss-Vds: 1180pF @ 40V

FET機能: ロジックレベルゲート

Current-Continuous-Drain-Id-25°C: 4.7A

Rds-On-Max-Id-Vgs: 44 mOhm @ 4.7A, 10V

Vgs-th-Max-Id: 4V @ 250μA

ゲートチャージ-Qg-Vgs: 35nC @ 10V

Pd-電力損失: 2 W

最高作動温度: + 175 C

最低作動温度: - 55 C

立ち下がり時間: 12 ns

立ち上がり時間: 8 ns

Vgs-Gate-Source-Voltage: 20 V

Id-連続-ドレイン-電流: 4.7 A

Vds-ドレイン-ソース-ブレークダウン-電圧: 80 V

Rds-On-Drain-Source-Resistance: 44 mOhms

トランジスタ-極性: Nチャネル

典型的なターンオフ遅延時間: 26 ns

典型的なターンオン遅延時間: 11 ns

フォワード-相互コンダクタンス-最小: 24 S

チャネルモード: 強化

Tags: FDS389, FDS38, FDS3, FDS

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDS3890 説明

***ure Electronics: N-Channel 80 V 44 mOhm Surface Mount Dual PowerTrench Mosfet SOIC-8

***Semiconductor: N-Channel Dual PowerTrench® MOSFET, 80V, 4.7A, 44mΩ

***p One Stop Japan: Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R

***Components: On a Reel of 2500, ON Semiconductor FDS3890 MOSFET

***eco: 008, PLASTIC MOLDED, SOIC-8 PKG, NARROW BODY, DUAL DIE <AZ

***i-Key: MOSFET 2N-CH 80V 4.7A SO-8

***et: S0-8, DUAL, NCH, 80V/20V

***ser: MOSFETs SO-8

***ark: Transistor; Continuous Drain Current, Id:4.7A; Drain Source Voltage, Vds:80V; On Resistance, Rds(on):0.05ohm; Rds(on) Test Voltage, Vgs:6V; Threshold Voltage, Vgs Typ:2.3V; Power Dissipation, Pd:2W ;RoHS Compliant: Yes

***ment14 APAC: N CHANNEL MOSFET, 80V, SOIC; Transistor; N CHANNEL MOSFET, 80V, SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:4.7A; Drain Source Voltage Vds, N Channel:80V; On Resistance Rds(on), N Channel:0.0034ohm; Rds(on) Test Voltage Vgs:6V

***nell: MOSFET, NN CH, 80V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:80V; On Resistance Rds(on):34mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

***rchild Semiconductor: This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Market price

モデル	メーカー	説明	ストック	価格
FDS3890 DISTI # FDS3890TR-ND	ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	2500:$0.7237
FDS3890 DISTI # FDS3890CT-ND	ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Temporarily Out of Stock	1000:$0.7986 500:$1.0116 100:$1.3044 10:$1.6500 1:$1.8600
FDS3890 DISTI # FDS3890DKR-ND	ON Semiconductor	MOSFET 2N-CH 80V 4.7A 8-SO RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Temporarily Out of Stock	1000:$0.7986 500:$1.0116 100:$1.3044 10:$1.6500 1:$1.8600
FDS3890 DISTI # FDS3890	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.5599 5000:$0.5569 10000:$0.5499 15000:$0.5429 25000:$0.5289
FDS3890 DISTI # FDS3890	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7889 5000:€0.6459 10000:€0.5919 15000:€0.5459 25000:€0.5069
FDS3890 DISTI # FDS3890	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R (Alt: FDS3890) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0	2500:$0.6875 5000:$0.6611 7500:$0.6366 12500:$0.6139 25000:$0.5927 62500:$0.5729 125000:$0.5635
FDS3890 DISTI # 67P3482	ON Semiconductor	Trans MOSFET N-CH 80V 4.7A 8-Pin SOIC N T/R - Product that comes on tape, but is not reeled (Alt: 67P3482) RoHS: Compliant Min Qty: 1 Container: Ammo Pack	Americas - 0	1:$1.7400 10:$1.4900 25:$1.3900 50:$1.3000 100:$1.2100 250:$1.1300 500:$1.0600
FDS3890 DISTI # 67P3482	ON Semiconductor	N CHANNEL MOSFET, 80V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:4.7A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.034ohm,Rds(on) Test Voltage Vgs:6V,Threshold Voltage Vgs:2.3V,Product Range:-RoHS Compliant: Yes	0	1:$1.7400 10:$1.4900 25:$1.3900 50:$1.3000 100:$1.2100 250:$1.1300 500:$1.0600 1000:$0.8800
FDS3890 DISTI # 87X8731	ON Semiconductor	Dual MOSFET, Dual N Channel, 4.7 A, 80 V, 0.034 ohm, 10 V, 2.3 V RoHS Compliant: Yes	52	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8930 1000:$0.7050
FDS3890 DISTI # 512-FDS3890	ON Semiconductor	MOSFET SO-8 RoHS: Compliant	0	1:$1.5500 10:$1.3200 100:$1.0200 500:$0.8930 1000:$0.7050 2500:$0.6250 10000:$0.6020
FDS3890	ON Semiconductor	RoHS: Not Compliant	2296	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100
FDS3890	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 4.7A I(D), 80V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	60	1000:$0.7400 500:$0.7800 100:$0.8100 25:$0.8400 1:$0.9100
FDS3890 DISTI # 8063630	ON Semiconductor	MOSFETFAIRCHILDFDS3890, PK	50	5:£1.0080 50:£0.8520 100:£0.7400
FDS3890 DISTI # 8063630P	ON Semiconductor	MOSFETFAIRCHILDFDS3890, RL	270	50:£0.8520 100:£0.7400
FDS3890	Fairchild Semiconductor Corporation		15
FDS3890 DISTI # 2101472	ON Semiconductor	MOSFET, NN CH, 80V, 8SOIC RoHS: Compliant	52	1:$2.4600 10:$2.0900 100:$1.6200 500:$1.4200 1000:$1.1200 2500:$0.9900 10000:$0.9530
FDS3890 DISTI # 2101472	ON Semiconductor	MOSFET, NN CH, 80V, 8SOIC RoHS: Compliant	1012	5:£1.1100 25:£1.0100 100:£0.8110 250:£0.7590 500:£0.7060

画像	モデル	説明
	Mfr.#: FDS9412 OMO.#: OMO-FDS9412	MOSFET SO-8 SGL N-CH 30V
	Mfr.#: FDS7066N7 OMO.#: OMO-FDS7066N7	MOSFET 30V N-Ch PowerTrench
	Mfr.#: FDS2570-NL OMO.#: OMO-FDS2570-NL-1190	ブランドニューオリジナル
	Mfr.#: FDS39L2 OMO.#: OMO-FDS39L2-1190	ブランドニューオリジナル
	Mfr.#: FDS4467NL OMO.#: OMO-FDS4467NL-1190	ブランドニューオリジナル
	Mfr.#: FDS4935BZ_G OMO.#: OMO-FDS4935BZ-G-1190	ブランドニューオリジナル
	Mfr.#: FDS6064N3 OMO.#: OMO-FDS6064N3-ON-SEMICONDUCTOR	MOSFET N-CH 20V 23A 8-SOIC
	Mfr.#: FDS6692S OMO.#: OMO-FDS6692S-1190	ブランドニューオリジナル
	Mfr.#: FDS7066ASN3 OMO.#: OMO-FDS7066ASN3-ON-SEMICONDUCTOR	MOSFET N-CH 30V 19A 8-SOIC
	Mfr.#: FDS6961A-CUT TAPE OMO.#: OMO-FDS6961A-CUT-TAPE-1190	ブランドニューオリジナル

FDS3890

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes