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FGP15N60UNDF

FGP15N60UNDF
Mfr. #:
FGP15N60UNDF
メーカー:
ON Semiconductor / Fairchild
説明:
IGBT Transistors 600V 15A NPT IGBT
ライフサイクル:
メーカー新製品
データシート:
FGP15N60UNDF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FGP15N60UNDF 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
IGBTトランジスタ
JBoss：
Y
テクノロジー：
Si
パッケージ/ケース：
TO-220-3
取り付けスタイル：
スルーホール
構成：
独身
コレクター-エミッター電圧VCEOMax：
600 V
コレクター-エミッター飽和電圧：
2.7 V
最大ゲートエミッタ電圧：
20 V
25℃での連続コレクタ電流：
30 A
Pd-消費電力：
178 W
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
シリーズ：
FGP15N60UNDF
包装：
チューブ
ブランド：
オン・セミコンダクター/フェアチャイルド
ゲートエミッタリーク電流：
+/- 10 uA
製品タイプ：
IGBTトランジスタ
ファクトリーパックの数量：
800
サブカテゴリ：
IGBT
単位重量：
0.063493 oz
Tags
FGP15N6, FGP15, FGP1, FGP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 600V 30A 178000mW 3-Pin(3+Tab) TO-220 Tube / IGBT 600V 30A 178W TO220-3
*** Stop Electro
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
***p One Stop Global
Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220F Tube
***r Electronics
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***rchild Semiconductor
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as : sewing machine, CNC, motor control and home appliances.
***ical
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STGF15Hxx Series 600 V 30 A Flange Mount Trench Gate Field-Stop IGBT - TO-220FP
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 15 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 30A I(C), 600V V(BR)CES, N-Channel, TO-220AB
***nell
IGBT, 600V, 30A, 175DEG C, 30W; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 30W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220FP; No. of Pins:
***p One Stop
Trans IGBT Chip N-CH 600V 30A 115000mW 3-Pin(3+Tab) TO-220 Tube
***icroelectronics
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***ure Electronics
STGP Series 600 V 30 A 24.5 ns t(on) Trench Gate Field-Stop IGBT - TO-220-3
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***et
TO-220, SINGLE, N-CHANNEL, 600V, SMPS II SERIES IGBT
***i-Key
IGBT 600V 28A 125W TO220AB
***ser
IGBTs Sgl, N-Ch, 600V
***el Electronic
IC REG LINEAR POS ADJ HRP7
***i-Key Marketplace
N-CHANNEL IGBT
***el Nordic
Contact for details
***nell
IGBT, N, TO-220; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:28A; Voltage, Vce Sat Max:2.7V; Power Dissipation:125W; Case Style:TO-220AB; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:40A; No. of Pins:3; Pin Format:GCE; Power, Pd:125W; Power, Ptot:125W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:50ns; Time, Rise:4.5ns; Transistors, No. of:1
***ow.cn
Trans IGBT Chip N-CH 600V 24A 54000mW 3-Pin(3+Tab) TO-220F-3FS Tube
*** Electronics
ON SEMICONDUCTOR NGTB15N60R2FG IGBT Single Transistor, 24 A, 1.85 V, 54 W, 600 V, TO-220F, 3 Pins
***nell
IGBT, SINGLE, 600V, 24A, TO-220F-3; DC Collector Current: 24A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 54W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-220F; No. of P
***p One Stop
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(3+Tab) TO-220AB Tube
***ineon SCT
600 V, 20 A IGBT with anti-parallel diode in TO-220AB package, TO220COPAK-3, RoHS
***ineon
Target Applications: Air Conditioner; Fan; Lighting HID; PFC; Pump; Solar; UPS; Washing Machine; Welding
***ment14 APAC
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Field Stop & Short Circuit Rated IGBTs
ON Semiconductor's Field Stop & short Circuit Rated IGBTs offer a variety of 600 and 650V Insulated Gate Bipolar Transistors (IGBTs) that have a collector current rating between 5A to 60A. This offers optimum performance for welding and PFC or low power inverter driven applications where low conduction, low switching losses and short circuit ruggedness features are essential. Typical applications for these include solar inverters, UPS, SMPS, welder, PFC, home appliance inverter driven (fan motor driver, circulation pump, refrigerator, dish washer), and industrial inverter (sewing machine, CNC).
モデル メーカー 説明 ストック 価格
FGP15N60UNDF
DISTI # FGP15N60UNDF-ND		ON SemiconductorIGBT 600V 30A 178W TO220-3
RoHS: Compliant
Min Qty: 1
Container: Tube		On Order
  • 1600:$1.3094
  • 800:$1.5802
  • 100:$1.9234
  • 10:$2.3930
  • 1:$2.6600
FGP15N60UNDF
DISTI # FGP15N60UNDF		ON SemiconductorTrans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-220 Tube - Rail/Tube (Alt: FGP15N60UNDF)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.1239
  • 1600:$1.1159
  • 3200:$1.1019
  • 4800:$1.0879
  • 8000:$1.0609
FGP15N60UNDF
DISTI # 512-FGP15N60UNDF		ON SemiconductorIGBT Transistors 600V 15A NPT IGBT
RoHS: Compliant		756
  • 1:$2.5400
  • 10:$2.1500
  • 100:$1.7200
  • 500:$1.5100
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    可用性
    ストック:
    617
    注文中:
    2600
    数量を入力してください:
    FGP15N60UNDFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
    参考価格（USD）
    量
    単価
    小計金額
    1
    $2.53
    $2.53
    10
    $2.15
    $21.50
    100
    $1.72
    $172.00
    500
    $1.50
    $750.00
    1000
    $1.24
    $1 240.00
    2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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