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NE3509M04-A

NE3509M04-A
Mfr. #:
NE3509M04-A
Manufacturer:
CEL
Description:
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Lifecycle:
New from this manufacturer.
Datasheet:
NE3509M04-A Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
NE3509M04-A DatasheetNE3509M04-A Datasheet (P4-P6)NE3509M04-A Datasheet (P7-P9)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
CEL
Product Category:
RF JFET Transistors
RoHS:
Y
Transistor Type:
HFET
Technology:
GaAs
Gain:
17.5 dB
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
4 V
Vgs - Gate-Source Breakdown Voltage:
- 3 V
Id - Continuous Drain Current:
60 mA
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
150 mW
Mounting Style:
SMD/SMT
Package / Case:
FTSMM-4 (M04)
Operating Frequency:
2 GHz
Product:
RF JFET
Type:
GaAs HFET
Brand:
CEL
Forward Transconductance - Min:
80 mS
Gate-Source Cutoff Voltage:
- 0.5 V
NF - Noise Figure:
0.4 dB
P1dB - Compression Point:
11 dBm
Product Type:
RF JFET Transistors
Factory Pack Quantity:
1
Subcategory:
Transistors
Tags
NE3509, NE350, NE35, NE3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ser
Small Signal GaAs FETs L to S Band Lo Noise Amplifier N-Ch HJFET
***et
Trans JFET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold
***hardson RFPD
RF SMALL SIGNAL TRANSISTOR HFET
***th Star Micro
AMP HJ-FET 2GHZ 4-SMINI
Part # Mfg. Description Stock Price
NE3509M04-A
DISTI # NE3509M04-A-ND		California Eastern Laboratories (CEL)FET RF 4V 2GHZ 4-SMINI
RoHS: Compliant
Min Qty: 120
Container: Bulk		Limited Supply - Call
    NE3509M04-A
    DISTI # 551-NE3509M04-A    		California Eastern Laboratories (CEL)RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
    RoHS: Compliant    		0
      Image Part # Description
      NE3508M04-EVNF23-A

      Mfr.#: NE3508M04-EVNF23-A

      OMO.#: OMO-NE3508M04-EVNF23-A

      		 RF Development Tools L to S band LNA Eval Brd
      NE3509M04-EVNF24-A

      Mfr.#: NE3509M04-EVNF24-A

      OMO.#: OMO-NE3509M04-EVNF24-A

      		 RF Development Tools For NE3509M04-A
      NE3503M04-T2-A

      Mfr.#: NE3503M04-T2-A

      OMO.#: OMO-NE3503M04-T2-A-CEL

      		 New and Original
      NE3508M04-A

      Mfr.#: NE3508M04-A

      OMO.#: OMO-NE3508M04-A-CEL

      		 RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
      NE3509M04-T2-A

      Mfr.#: NE3509M04-T2-A

      OMO.#: OMO-NE3509M04-T2-A-CEL

      		 New and Original
      NE350184C-T1A

      Mfr.#: NE350184C-T1A

      OMO.#: OMO-NE350184C-T1A-1152

      		 RF JFET Transistors Low Noise HJ FET
      NE3503M04-T2 , ELM99501A

      Mfr.#: NE3503M04-T2 , ELM99501A

      OMO.#: OMO-NE3503M04-T2-ELM99501A-1190

      		 New and Original
      NE3503M04-T2B-A/JT

      Mfr.#: NE3503M04-T2B-A/JT

      OMO.#: OMO-NE3503M04-T2B-A-JT-1190

      		 New and Original
      NE3508M04-T1-A

      Mfr.#: NE3508M04-T1-A

      OMO.#: OMO-NE3508M04-T1-A-1190

      		 New and Original
      NE3509M04-EVNF24-A

      Mfr.#: NE3509M04-EVNF24-A

      OMO.#: OMO-NE3509M04-EVNF24-A-CEL

      		 EVAL DEV RF NE3509M04
      Availability
      Stock:
      Available
      On Order:
      1500
      Enter Quantity:
      Current price of NE3509M04-A is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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