FDD10AN06A0-F085

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

50 A

Rds On - Drain-Source Resistance:

9.4 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

28 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

135 W

Configuration:

Single

Qualification:

AEC-Q101

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Series:

FDD10AN06_F085

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

ON Semiconductor / Fairchild

Fall Time:

32 ns

Product Type:

MOSFET

Rise Time:

79 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

32 ns

Typical Turn-On Delay Time:

8 ns

Part # Aliases:

FDD10AN06A0_F085

Unit Weight:

0.009184 oz

Tags

FDD10AN06A0, FDD10AN06A, FDD10A, FDD10, FDD1, FDD