DZT658-13

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

SOT-223-4

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

400 V

Collector- Base Voltage VCBO:

400 V

Emitter- Base Voltage VEBO:

5 V

Collector-Emitter Saturation Voltage:

500 mV

Maximum DC Collector Current:

1 A

Gain Bandwidth Product fT:

50 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

DZT658

DC Current Gain hFE Max:

50 at 1 mA, 5 V

Height:

1.6 mm

Length:

6.5 mm

Packaging:

Reel

Width:

3.5 mm

Brand:

Diodes Incorporated

DC Collector/Base Gain hfe Min:

40 at 200 mA, 10 V

Pd - Power Dissipation:

1000 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Unit Weight:

0.003951 oz

Tags

DZT658, DZT6, DZT