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| Part # | Mfg. | Description | Stock | Price |
|---|---|---|---|---|
| SI7716ADN-T1-GE3 DISTI # V72:2272_09216376 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 2700 |
|
| SI7716ADN-T1-GE3 DISTI # V36:1790_09216376 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 0 |
|
| SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3CT-ND | Vishay Siliconix | MOSFET N-CH 30V 16A 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 17747In Stock |
|
| SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3DKR-ND | Vishay Siliconix | MOSFET N-CH 30V 16A 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 17747In Stock |
|
| SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3TR-ND | Vishay Siliconix | MOSFET N-CH 30V 16A 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | 15000In Stock |
|
| SI7716ADN-T1-GE3 DISTI # 32726518 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 3000 |
|
| SI7716ADN-T1-GE3 DISTI # 31084371 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R RoHS: Compliant | 2700 |
|
| SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7716ADN-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel | Americas - 0 |
|
| SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Asia - 0 | |
| SI7716ADN-T1-GE3 DISTI # SI7716ADN-T1-GE3 | Vishay Intertechnologies | Trans MOSFET N-CH 30V 12A 8-Pin PowerPAK 1212 T/R (Alt: SI7716ADN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel | Europe - 0 |
|
| SI7716ADN-T1-GE3. DISTI # 28AC2175 | Vishay Intertechnologies | N-CHANNEL 30-V (D-S) MOSFET ROHS COMPLIANT: NO | 33000 |
|
| SI7716ADN-T1-GE3 DISTI # 18X0024 | Vishay Intertechnologies | MOSFET, N CHANNEL, 30V, 16A, POWERPAK 1212-8,Transistor Polarity:N Channel,Continuous Drain Current Id:16A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0105ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V RoHS Compliant: Yes | 0 |
|
| SI7716ADN-T1-GE3 DISTI # 781-SI7716ADN-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | 5335 |
|
| SI7716ADN-T1-GE3 | Vishay Intertechnologies | 2946 | ||
| SI7716ADN-T1-GE3 | Vishay Intertechnologies | 50 | ||
| SI7716ADN-T1-GE3 | Vishay Siliconix | 5033 | ||
| SI7716ADN-T1-GE3 DISTI # 2478976 | Vishay Intertechnologies | N CHANNEL MOSFET, 30V, 16A POWERPAK, FUL RoHS: Compliant | 0 |
|
| SI7716ADNT1GE3 | Vishay Intertechnologies | Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 3000 | |
| SI7716ADN-T1-GE3 | Vishay Intertechnologies | MOSFET 30V Vds 20V Vgs PowerPAK 1212-8 RoHS: Compliant | Americas - 24000 |
|
| SIS436DN-T1-GE3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 781-SI7716ADN-T1-GE3 RoHS: Compliant | Americas - 12000 |
|
| Image | Part # | Description |
|---|---|---|
|
Mfr.#: SI7112DN-T1-E3 OMO.#: OMO-SI7112DN-T1-E3 |
MOSFET 30V 17.8A 3.8W 7.5mohm @ 10V |
|
Mfr.#: SI7858BDP-T1-GE3 OMO.#: OMO-SI7858BDP-T1-GE3 |
MOSFET 12V Vds 8V Vgs PowerPAK SO-8 |
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Mfr.#: SI7668ADP-T1-GE3 OMO.#: OMO-SI7668ADP-T1-GE3 |
MOSFET RECOMMENDED ALT 78-SIRA04DP-T1-GE3 |
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Mfr.#: SI7909DN-T1-E3 OMO.#: OMO-SI7909DN-T1-E3 |
MOSFET RECOMMENDED ALT 781-SI7913DN-T1-GE3 |
|
Mfr.#: SI7840BDP-T1-E3 OMO.#: OMO-SI7840BDP-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 30V 14A 4.1W 8.5mohm @ 10V |
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Mfr.#: SI7196DP-T1-E3 OMO.#: OMO-SI7196DP-T1-E3-VISHAY |
RF Bipolar Transistors MOSFET 30V 16A 41.6W |
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Mfr.#: SI7409DN-T1-GE3 OMO.#: OMO-SI7409DN-T1-GE3-1190 |
New and Original |
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Mfr.#: SI7682DP-T1-GE3 OMO.#: OMO-SI7682DP-T1-GE3-VISHAY |
MOSFET N-CH 30V 20A PPAK SO-8 |
|
Mfr.#: SI7818DN-T1-GE3 OMO.#: OMO-SI7818DN-T1-GE3-VISHAY |
MOSFET N-CH 150V 2.2A 1212-8 |
|
Mfr.#: SI7015-A10-GM1R |
SENS HUMI/TEMP 3.6V I2C 4.5% QFN |