2SB1326TV2Q

Product Attribute

Attribute Value

Manufacturer:

ROHM Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Transistor Polarity:

PNP

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

6 V

Maximum DC Collector Current:

5 A

Gain Bandwidth Product fT:

120 MHz

Maximum Operating Temperature:

+ 150 C

DC Current Gain hFE Max:

120 at 500 mA, 2 V

Height:

4.4 mm

Length:

6.8 mm

Packaging:

Ammo Pack

Width:

2.5 mm

Brand:

ROHM Semiconductor

DC Collector/Base Gain hfe Min:

120

Pd - Power Dissipation:

1500 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2500

Subcategory:

Transistors

Tags

2SB132, 2SB13, 2SB1, 2SB