BSM50GD120DN2

Mfr. #:: BSM50GD120DN2
Manufacturer:: EUPEC
Description:: IGBT Modules 1200V 50A FL BRIDGE
Lifecycle:: New from this manufacturer.
Datasheet:: BSM50GD120DN2 Datasheet
Delivery:: DHL FedEx Ups TNT EMS
Payment:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

Product Attribute
Attribute Value

Manufacturer: EUPEC

Product Category: Module

Product: IGBT Silicon Modules

Mounting-Style: Screw

Package-Case: EconoPACK 2A

Configuration: Hex

Pd-Power-Dissipation: 350 W

Maximum-Operating-Temperature: + 150 C

Minimum-Operating-Temperature: - 40 C

Collector-Emitter-Voltage-VCEO-Max: 1200 V

Collector-Emitter-Saturation-Voltage: 2.5 V

Continuous-Collector-Current-at-25-C: 72 A

Gate-Emitter-Leakage-Current: 200 nA

Maximum-Gate-Emitter-Voltage: 20 V

Tags: BSM50GD120DN, BSM50GD120D, BSM50GD12, BSM50GD1, BSM50GD, BSM50G, BSM5, BSM

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

BSM50GD120DN2 Description

***omponent: IGBT Power Module (Power module 3-phase full-bridge Including fast free-wheel diodes)

***ser: IGBT - Standard Modules 1200V,50A,FL BRIDGE

***nell: IGBT MODULE, 1200V, ECONOPACK3; Transistor type:3-Phase Bridge; Voltage, Vces:1200V; Current, Ic continuous a max:50A; Voltage, Vce sat max:3V; Power dissipation:350W; Case style:Econopack 2K; Current, Icm pulsed:100A; Power, Pd:350W; Temperature, current:80°C; Temperature, full power rating:25°C; Termination Type:Solder; Transistors, No. of:6; Voltage, Vce sat typ:2.5V; Voltage, Vceo:1200V

Market price

Part #	Mfg.	Description	Stock	Price
BSM50GD120DN2BOSA1 DISTI # BSM50GD120DN2BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO2-2 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$134.4000
BSM50GD120DN2E3226BOSA1 DISTI # BSM50GD120DN2E3226BOSA1-ND	Infineon Technologies AG	IGBT 2 LOW POWER ECONO2-2 RoHS: Compliant Min Qty: 10 Container: Tray	Limited Supply - Call	10:$134.4000
BSM50GD120DN2G DISTI # BSM50GD120DN2G-ND	Infineon Technologies AG	IGBT BSM50GD120DN2GBOSA1 RoHS: Compliant Min Qty: 10 Container: Bulk	Limited Supply - Call
BSM50GD120DN2 DISTI # SP000100359	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 72A 17-Pin EconoPACK 2A (Alt: SP000100359) RoHS: Compliant Min Qty: 1 Container: Package	Europe - 22	1:€164.3900 10:€132.8900 25:€120.7900 50:€116.6900 100:€112.8900 500:€109.5900 1000:€107.0900
BSM50GD120DN2 DISTI # SP000100359	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 72A 17-Pin EconoPACK 2A (Alt: SP000100359) RoHS: Compliant Min Qty: 1 Container: Package	Europe - 0	1:€140.1900 10:€128.5900 25:€123.3900 50:€118.6900 100:€114.2900 500:€110.1900 1000:€102.7900
BSM50GD120DN2BOSA1 DISTI # BSM50GD120DN2BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A nom 350W FL Bridge - Trays (Alt: BSM50GD120DN2BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$130.7900 20:$125.9900 40:$121.4900 60:$117.3900 100:$115.2900
BSM50GD120DN2E3226 DISTI # SP000100366	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A 17-Pin ECONOPACK 2 T/R (Alt: SP000100366) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€164.3900 10:€132.8900 25:€120.7900 50:€116.6900 100:€112.8900 500:€109.5900 1000:€107.0900
BSM50GD120DN2E3226 DISTI # SP000100366	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A 17-Pin ECONOPACK 2 T/R (Alt: SP000100366) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€140.1900 10:€128.5900 25:€123.3900 50:€118.6900 100:€114.2900 500:€110.1900 1000:€102.7900
BSM50GD120DN2E3226BOSA1 DISTI # BSM50GD120DN2E3226BOSA1	Infineon Technologies AG	Trans IGBT Module N-CH 1.2kV 50A nom 350W FL Bridge T/R - Trays (Alt: BSM50GD120DN2E3226BOSA1) RoHS: Compliant Min Qty: 10 Container: Tray	Americas - 0	10:$130.7900 20:$125.9900 40:$121.4900 60:$117.3900 100:$115.2900
BSM50GD120DN2BOSA1 DISTI # 61M5056	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3,Transistor Polarity:N Channel,DC Collector Current:72A,Collector Emitter Saturation Voltage Vce(on):3V,Power Dissipation Pd:350W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:17Pins RoHS Compliant: Yes	0	1:$138.9000 5:$136.1700 10:$129.8200 25:$127.0900
BSM50GD120DN2 DISTI # 641-BSM50GD120DN2	Infineon Technologies AG	IGBT Modules 1200V 50A FL BRIDGE RoHS: Compliant	0
BSM50GD120DN2E3226 DISTI # 641-BSM50GD120DN2E32	Infineon Technologies AG	IGBT Modules N-CH 1.2KV 50A	0
BSM50GD120DN2G DISTI # 641-BSM50GD120DN2G	Infineon Technologies AG	IGBT Modules 1200V 50A 3-PHASE RoHS: Not compliant	0
BSM50GD120DN2 DISTI # BSM50GD120DN2	Infineon Technologies AG	IGBT half-bridge x3,Urmax:1.2kV,Ic:50A,P:350W,Ifsm:100A	9	1:$180.6900 3:$162.6200 10:$132.1300
BSM50GD120DN2	Infineon Technologies AG	Insulated Gate Bipolar Transistor, 72A I(C), 1200V V(BR)CES, N-Channel RoHS: Not Compliant	Europe - 2
BSM50GD120DN2BOSA1 DISTI # 1496949	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant	0	1:$219.7900 5:$215.4800 10:$205.4300
BSM50GD120DN2BOSA1 DISTI # 1496949	Infineon Technologies AG	IGBT MODULE, 1200V, ECONOPACK3 RoHS: Compliant	0	1:£135.0000 5:£133.0000 10:£117.0000

Image	Part #	Description
	Mfr.#: BSM50GAL120D OMO.#: OMO-BSM50GAL120D-1190	New and Original
	Mfr.#: BSM50GD120DLCE3224 OMO.#: OMO-BSM50GD120DLCE3224-1190	New and Original
	Mfr.#: BSM50GD120DN2(6) OMO.#: OMO-BSM50GD120DN2-6--1190	New and Original
	Mfr.#: BSM50GD120DN2E3224 OMO.#: OMO-BSM50GD120DN2E3224-1190	New and Original
	Mfr.#: BSM50GD120DN2_E3226 OMO.#: OMO-BSM50GD120DN2-E3226-1190	New and Original
	Mfr.#: BSM50GD60DN2 OMO.#: OMO-BSM50GD60DN2-1190	Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES
	Mfr.#: BSM50GP60BOSA1 OMO.#: OMO-BSM50GP60BOSA1-INFINEON-TECHNOLOGIES	IGBT 2 LOW POWER ECONO2-5
	Mfr.#: BSM50GP60GBOSA1 OMO.#: OMO-BSM50GP60GBOSA1-INFINEON-TECHNOLOGIES	IGBT 2 LOW POWER ECONO3-3
	Mfr.#: BSM50GD120DN2E3226 OMO.#: OMO-BSM50GD120DN2E3226-125	IGBT Modules N-CH 1.2KV 50A
	Mfr.#: BSM50GB60DLC OMO.#: OMO-BSM50GB60DLC-125	IGBT Modules 600V 50A DUAL

BSM50GD120DN2

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes