IRF7459PBF

IRF7459PBF
Mfr. #:
IRF7459PBF
メーカー:
Infineon / IR
説明:
MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
ライフサイクル:
メーカー新製品
データシート:
IRF7459PBF データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7459PBF DatasheetIRF7459PBF Datasheet (P4-P6)IRF7459PBF Datasheet (P7-P8)
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
MOSFET
JBoss:
Y
テクノロジー:
Si
取り付けスタイル:
SMD / SMT
パッケージ/ケース:
SO-8
チャネル数:
1 Channel
トランジスタの極性:
Nチャネル
Vds-ドレイン-ソース間降伏電圧:
20 V
Id-連続ドレイン電流:
10 A
Rds On-ドレイン-ソース抵抗:
11 mOhms
Vgs-ゲート-ソース間電圧:
12 V
Qg-ゲートチャージ:
23 nC
最低動作温度:
- 55 C
最高作動温度:
+ 150 C
Pd-消費電力:
2.5 W
構成:
独身
チャネルモード:
強化
包装:
チューブ
高さ:
1.75 mm
長さ:
4.9 mm
トランジスタタイプ:
1 N-Channel
タイプ:
Smps MOSFET
幅:
3.9 mm
ブランド:
インフィニオン/ IR
立ち下がり時間:
5 ns
製品タイプ:
MOSFET
立ち上がり時間:
4.5 ns
ファクトリーパックの数量:
4085
サブカテゴリ:
MOSFET
典型的なターンオフ遅延時間:
20 ns
典型的なターンオン遅延時間:
10 ns
パーツ番号エイリアス:
SP001572154
単位重量:
0.019048 oz
Tags
IRF7459, IRF745, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 12A 8-Pin SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 20V, 12A, SOIC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; SMD Marking:F7459; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
モデル メーカー 説明 ストック 価格
IRF7459PBF
DISTI # IRF7459PBF-ND
Infineon Technologies AGMOSFET N-CH 20V 12A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube
Limited Supply - Call
    IRF7459PBF
    DISTI # 70018251
    Infineon Technologies AGMOSFET,20V,10A,9 MOHM,23 NC QG,SO-8
    RoHS: Compliant
    0
    • 4085:$0.5200
    IRF7459PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 *** 12 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA20
    • 16:$1.3200
    • 4:$1.6500
    • 1:$1.9800
    IRF7459PBF
    DISTI # 9102620
    Infineon Technologies AGMOSFET, N, LOGIC, SO-8
    RoHS: Compliant
    0
    • 1000:$0.9890
    • 500:$1.0600
    • 250:$1.1200
    • 100:$1.2500
    • 10:$1.6300
    • 1:$2.3700
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    可用性
    ストック:
    Available
    注文中:
    5000
    数量を入力してください:
    IRF7459PBFの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
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