IRF7459PBF

IRF7459PBF
Mfr. #:
IRF7459PBF
Manufacturer:
Infineon / IR
Description:
MOSFET 20V 1 N-CH HEXFET 9mOhms 23nC
Lifecycle:
New from this manufacturer.
Datasheet:
IRF7459PBF Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF7459PBF DatasheetIRF7459PBF Datasheet (P4-P6)IRF7459PBF Datasheet (P7-P8)
ECAD Model:
Product Attribute
Attribute Value
Manufacturer:
Infineon
Product Category:
MOSFET
RoHS:
Y
Technology:
Si
Mounting Style:
SMD/SMT
Package / Case:
SO-8
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
20 V
Id - Continuous Drain Current:
10 A
Rds On - Drain-Source Resistance:
11 mOhms
Vgs - Gate-Source Voltage:
12 V
Qg - Gate Charge:
23 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Pd - Power Dissipation:
2.5 W
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Tube
Height:
1.75 mm
Length:
4.9 mm
Transistor Type:
1 N-Channel
Type:
Smps MOSFET
Width:
3.9 mm
Brand:
Infineon / IR
Fall Time:
5 ns
Product Type:
MOSFET
Rise Time:
4.5 ns
Factory Pack Quantity:
4085
Subcategory:
MOSFETs
Typical Turn-Off Delay Time:
20 ns
Typical Turn-On Delay Time:
10 ns
Part # Aliases:
SP001572154
Unit Weight:
0.019048 oz
Tags
IRF7459, IRF745, IRF74, IRF7, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 20V 12A 8-Pin SOIC
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):9mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 20V, 12A, SOIC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:12A; Drain Source Voltage Vds:20V; On Resistance Rds(on):9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:12A; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Junction Temperature Tj Min:-55°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:100A; SMD Marking:F7459; Termination Type:SMD; Voltage Vds:20V; Voltage Vds Typ:20V; Voltage Vgs Max:2V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2V
Part # Mfg. Description Stock Price
IRF7459PBF
DISTI # IRF7459PBF-ND
Infineon Technologies AGMOSFET N-CH 20V 12A 8-SOIC
RoHS: Compliant
Min Qty: 4085
Container: Tube
Limited Supply - Call
    IRF7459PBF
    DISTI # 70018251
    Infineon Technologies AGMOSFET,20V,10A,9 MOHM,23 NC QG,SO-8
    RoHS: Compliant
    0
    • 4085:$0.5200
    IRF7459PBFInternational Rectifier*** FREE SHIPPING ORDERS OVER $100 *** 12 A, 20 V, 0.009 ohm, N-CHANNEL, Si, POWER, MOSFET, MS-012AA20
    • 16:$1.3200
    • 4:$1.6500
    • 1:$1.9800
    IRF7459PBF
    DISTI # 9102620
    Infineon Technologies AGMOSFET, N, LOGIC, SO-8
    RoHS: Compliant
    0
    • 1000:$0.9890
    • 500:$1.0600
    • 250:$1.1200
    • 100:$1.2500
    • 10:$1.6300
    • 1:$2.3700
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    Availability
    Stock:
    Available
    On Order:
    5000
    Enter Quantity:
    Current price of IRF7459PBF is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
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