IPD050N10N5ATMA1

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

DPAK-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

80 A

Rds On - Drain-Source Resistance:

4.3 mOhms

Vgs th - Gate-Source Threshold Voltage:

2.2 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

64 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 175 C

Pd - Power Dissipation:

150 W

Configuration:

Single

Channel Mode:

Enhancement

Tradename:

OptiMOS

Packaging:

Reel

Series:

OptiMOS 5

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Forward Transconductance - Min:

48 S

Fall Time:

7 ns

Moisture Sensitive:

Yes

Product Type:

MOSFET

Rise Time:

7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

27 ns

Typical Turn-On Delay Time:

13 ns

Part # Aliases:

IPD050N10N5 SP001602184

Tags

IPD050, IPD05, IPD0, IPD