STD4NK80ZT4

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

800 V

Id - Continuous Drain Current:

3 A

Rds On - Drain-Source Resistance:

3.5 Ohms

Vgs th - Gate-Source Threshold Voltage:

3 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

22.5 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

80 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.4 mm

Length:

6.6 mm

Series:

STD4NK80Z

Transistor Type:

1 N-Channel MOSFET

Type:

MOSFET

Width:

6.2 mm

Brand:

STMicroelectronics

Forward Transconductance - Min:

2.9 S

Fall Time:

32 ns

Product Type:

MOSFET

Rise Time:

12 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

35 ns

Typical Turn-On Delay Time:

13 ns

Unit Weight:

0.139332 oz

Tags

STD4NK80ZT, STD4NK8, STD4NK, STD4N, STD4, STD