IKQ50N120CT2XKSA1

IKQ50N120CT2XKSA1
Mfr. #:
IKQ50N120CT2XKSA1
メーカー:
Infineon Technologies
説明:
IGBT Transistors IGBT PRODUCTS
ライフサイクル:
メーカー新製品
データシート:
IKQ50N120CT2XKSA1 データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
製品属性
属性値
メーカー:
インフィニオン
製品カテゴリ:
IGBTトランジスタ
JBoss:
Y
テクノロジー:
Si
パッケージ/ケース:
TO247-3-46
取り付けスタイル:
スルーホール
構成:
独身
コレクター-エミッター電圧VCEOMax:
1200 V
コレクター-エミッター飽和電圧:
1.75 V
最大ゲートエミッタ電圧:
20 V
25℃での連続コレクタ電流:
100 A
Pd-消費電力:
652 W
最低動作温度:
- 40 C
最高作動温度:
+ 175 C
包装:
チューブ
連続コレクタ電流IcMax:
100 A
ブランド:
インフィニオンテクノロジーズ
ゲートエミッタリーク電流:
100 nA
製品タイプ:
IGBTトランジスタ
ファクトリーパックの数量:
240
サブカテゴリ:
IGBT
パーツ番号エイリアス:
IKQ50N120CT2 SP001272736
単位重量:
0.211644 oz
Tags
IKQ5, IKQ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ50N120CT2XKSA1 P-Channel IGBT, 100 A 1200 V, 3-Pin TO-247
***ical
Trans IGBT Chip N-CH 1200V 100A 652000mW 3-Pin(3+Tab) TO-247 Tube
***ronik
IGBT 1200V 50A 1,75V TO247-3
***i-Key
IGBT 1200V 100A TO247-3-46
***et
IGBT PRODUCTS
***ark
Igbt, 1.2Kv, 100A, 652W, To-247; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 100A, 652W, TO-247; DC Collector Current:100A; Collector Emitter Saturation Voltage Vce(on):1.75V; Power Dissipation Pd:652W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:TRENCHSTOP 2 Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 100A, 652W, TO-247; Corrente di Collettore CC:100A; Tensione Saturaz Collettore-Emettitore Vce(on):1.75V; Dissipazione di Potenza Pd:652W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:TRENCHSTOP 2 Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Motor control; Industrial drives; Other low speed hard switching applications (f sw <20kHz)
モデル メーカー 説明 ストック 価格
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2XKSA1-ND
Infineon Technologies AGIGBT 1200V 100A TO247-3-46
RoHS: Compliant
Min Qty: 1
Container: Tube
146In Stock
  • 720:$8.4663
  • 240:$9.5173
  • 25:$10.8020
  • 10:$11.2690
  • 1:$12.2600
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2XKSA1
Infineon Technologies AGIGBTs - Rail/Tube (Alt: IKQ50N120CT2XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$6.9900
  • 1440:$7.0900
  • 960:$7.3900
  • 480:$7.6900
  • 240:$7.9900
IKQ50N120CT2XKSA1
DISTI # SP001272736
Infineon Technologies AGIGBTs (Alt: SP001272736)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€5.7900
  • 500:€6.1900
  • 100:€6.3900
  • 50:€6.6900
  • 25:€6.8900
  • 10:€7.1900
  • 1:€7.8900
IKQ50N120CT2XKSA1
DISTI # 93AC7070
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247,DC Collector Current:100A,Collector Emitter Saturation Voltage Vce(on):1.75V,Power Dissipation Pd:652W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes173
  • 500:$8.1400
  • 250:$8.7000
  • 100:$9.1500
  • 50:$9.7700
  • 25:$10.3800
  • 10:$10.8400
  • 1:$11.7900
IKQ50N120CT2XKSA1
DISTI # 726-IKQ50N120CT2XKSA
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
442
  • 1:$11.6700
  • 10:$10.7300
  • 25:$10.2800
  • 100:$9.0600
  • 250:$8.6100
  • 500:$8.0600
IKQ50N120CT2XKSA1
DISTI # 1623284
Infineon Technologies AGIGBT 1200V 50A TRENCHSTOP2 DIODE TO-247, TU194
  • 600:£5.7910
  • 300:£6.2050
  • 150:£6.6820
  • 30:£7.2390
IKQ50N120CT2XKSA1
DISTI # IKQ50N120CT2
Infineon Technologies AGTransistor: IGBT,1.2kV,50A,151W,TO247-3477
  • 30:$8.6000
  • 10:$9.2200
  • 3:$10.2600
  • 1:$11.6100
IKQ50N120CT2XKSA1
DISTI # 2986435
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247165
  • 100:£6.5600
  • 50:£7.0100
  • 10:£7.4600
  • 5:£8.4500
  • 1:£8.9700
IKQ50N120CT2XKSA1
DISTI # 2986435
Infineon Technologies AGIGBT, 1.2KV, 100A, 652W, TO-247
RoHS: Compliant
163
  • 250:$10.4900
  • 100:$10.5900
  • 50:$11.8100
  • 10:$12.6300
  • 5:$13.1000
  • 1:$13.5900
画像 モデル 説明
OPA320AIDBVR

Mfr.#: OPA320AIDBVR

OMO.#: OMO-OPA320AIDBVR

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NGTB40N120L3WG

Mfr.#: NGTB40N120L3WG

OMO.#: OMO-NGTB40N120L3WG

IGBT Transistors IGBT 1200V 40A FS3 LOW VC
C2M0040120D

Mfr.#: C2M0040120D

OMO.#: OMO-C2M0040120D

MOSFET SiC Power MOSFET 1200V, 60A
LM2937IMPX-15/NOPB

Mfr.#: LM2937IMPX-15/NOPB

OMO.#: OMO-LM2937IMPX-15-NOPB

LDO Voltage Regulators 500 mA LDO Reg
2SC0435T2F1-17

Mfr.#: 2SC0435T2F1-17

OMO.#: OMO-2SC0435T2F1-17

Power Management Modules Dual Ch SCALE 1700V IGBT Driver HVIC
OPA320AIDBVR

Mfr.#: OPA320AIDBVR

OMO.#: OMO-OPA320AIDBVR-TEXAS-INSTRUMENTS

Precision Amplifiers PRECISION,20MHZ,RRIO CMOS OP AMP
TSW-110-07-G-D

Mfr.#: TSW-110-07-G-D

OMO.#: OMO-TSW-110-07-G-D-SAMTEC

Conn Unshrouded Header HDR 20 POS 2.54mm Solder ST Thru-Hole Bag
C2M0040120D

Mfr.#: C2M0040120D

OMO.#: OMO-C2M0040120D-WOLFSPEED

MOSFET N-CH 1200V 60A TO-247
LM2937IMPX-15/NOPB

Mfr.#: LM2937IMPX-15/NOPB

OMO.#: OMO-LM2937IMPX-15-NOPB-TEXAS-INSTRUMENTS

LDO Voltage Regulators 500 mA LDO Reg
SCT50N120

Mfr.#: SCT50N120

OMO.#: OMO-SCT50N120-STMICROELECTRONICS

MOSFET N-CH 1.2KV TO247-3
可用性
ストック:
442
注文中:
2425
数量を入力してください:
IKQ50N120CT2XKSA1の現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
参考価格(USD)
単価
小計金額
1
$11.67
$11.67
10
$10.73
$107.30
25
$10.28
$257.00
100
$9.06
$906.00
250
$8.61
$2 152.50
500
$8.06
$4 030.00
2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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