LND150N3-G-P013

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

500 V

Id - Continuous Drain Current:

30 mA

Rds On - Drain-Source Resistance:

1 kOhms

Vgs - Gate-Source Voltage:

20 V

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

740 mW

Configuration:

Single

Channel Mode:

Depletion

Packaging:

Ammo Pack

Height:

5.33 mm

Length:

5.21 mm

Product:

MOSFET Small Signal

Transistor Type:

1 N-Channel

Width:

4.19 mm

Brand:

Microchip Technology

Fall Time:

1300 ns

Product Type:

MOSFET

Rise Time:

450 ns

Factory Pack Quantity:

2000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

100 ns

Typical Turn-On Delay Time:

90 ns

Unit Weight:

0.016000 oz

Tags

LND150N3-G-P, LND150N3-G, LND150N3, LND150N, LND150, LND15, LND1, LND