IPS65R1K0CEAKMA2

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

PG-TO-251-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

650 V

Id - Continuous Drain Current:

7.2 A

Rds On - Drain-Source Resistance:

1 Ohms

Vgs th - Gate-Source Threshold Voltage:

2.5 V

Vgs - Gate-Source Voltage:

10 V

Qg - Gate Charge:

15.3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

68 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Tube

Transistor Type:

1 N-Channel

Brand:

Infineon Technologies

Fall Time:

13.6 ns

Product Type:

MOSFET

Rise Time:

5.2 ns

Factory Pack Quantity:

1500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

41 ns

Typical Turn-On Delay Time:

6.6 ns

Part # Aliases:

IPS65R1K0CE SP001724356

Tags

IPS65R1K0CEA, IPS65R1K0, IPS65R1, IPS65R, IPS65, IPS6, IPS