ZXT12N20DXTA

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

SMD/SMT

Package / Case:

MSOP-8

Transistor Polarity:

NPN

Configuration:

Dual

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

50 V

Emitter- Base Voltage VEBO:

7.5 V

Collector-Emitter Saturation Voltage:

160 mV

Maximum DC Collector Current:

3.5 A

Gain Bandwidth Product fT:

112 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Series:

ZXT12

DC Current Gain hFE Max:

250 at 10 mA, 2 V

Height:

0.95 mm

Length:

3.1 mm

Packaging:

Reel

Width:

3.1 mm

Brand:

Diodes Incorporated

Continuous Collector Current:

3.5 A

DC Collector/Base Gain hfe Min:

250 at 10 mA, 2 V, 300 at 1 A, 2 V, 200 at 3.5 A, 2 V, 40 at 10 A, 2 V

Pd - Power Dissipation:

870 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

1000

Subcategory:

Transistors

Unit Weight:

0.004938 oz

Tags

ZXT12N20DXT, ZXT12N2, ZXT12N, ZXT12, ZXT1, ZXT