NTMFS4C55NT1G

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

SO-FL-8

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

30 V

Id - Continuous Drain Current:

21.7 A

Rds On - Drain-Source Resistance:

2.7 mOhms

Vgs th - Gate-Source Threshold Voltage:

1.3 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

14 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

33 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Length:

6 mm

Series:

NTMFS4C55N

Transistor Type:

1 N-Channel

Width:

5 mm

Brand:

ON Semiconductor

Forward Transconductance - Min:

68 S

Development Kit:

-

Fall Time:

7 ns

Product Type:

MOSFET

Rise Time:

32 ns

Factory Pack Quantity:

1500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

21 ns

Typical Turn-On Delay Time:

11 ns

Unit Weight:

0.019048 oz

Tags

NTMFS4C5, NTMFS4C, NTMFS4, NTMFS, NTMF, NTM