2N5089RLRA

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Mounting Style:

Through Hole

Package / Case:

TO-92-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

25 V

Collector- Base Voltage VCBO:

30 V

Emitter- Base Voltage VEBO:

3 V

Collector-Emitter Saturation Voltage:

0.5 V

Maximum DC Collector Current:

0.05 A

Gain Bandwidth Product fT:

50 MHz

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Height:

5.33 mm

Length:

5.2 mm

Packaging:

Reel

Width:

4.19 mm

Brand:

ON Semiconductor

Continuous Collector Current:

0.05 A

DC Collector/Base Gain hfe Min:

400

Pd - Power Dissipation:

625 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

2000

Subcategory:

Transistors

Tags

2N5089R, 2N5089, 2N508, 2N50, 2N5