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FDMS3686S

FDMS3686S
Mfr. #:
FDMS3686S
メーカー:
ON Semiconductor / Fairchild
説明:
MOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET
ライフサイクル:
メーカー新製品
データシート:
FDMS3686S データシート
配達:
DHL FedEx Ups TNT EMS
支払い:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
詳しくは:
FDMS3686S 詳しくは
製品属性
属性値
メーカー：
オン・セミコンダクター
製品カテゴリ：
MOSFET
JBoss：
Y
テクノロジー：
Si
取り付けスタイル：
SMD / SMT
パッケージ/ケース：
Power-56-8
チャネル数：
2 Channel
トランジスタの極性：
Nチャネル
Vds-ドレイン-ソース間降伏電圧：
30 V
Id-連続ドレイン電流：
23 A
Rds On-ドレイン-ソース抵抗：
8 mOhms
最低動作温度：
- 55 C
最高作動温度：
+ 150 C
Pd-消費電力：
2.5 W
構成：
デュアル
チャネルモード：
強化
商標名：
パワーステージPowerTrench
包装：
リール
高さ：
1.1 mm
長さ：
6 mm
シリーズ：
FDMS3686S
トランジスタタイプ：
2 N-Channel
幅：
5 mm
ブランド：
オン・セミコンダクター/フェアチャイルド
製品タイプ：
MOSFET
ファクトリーパックの数量：
3000
サブカテゴリ：
MOSFET
単位重量：
0.003175 oz
Tags
FDMS36, FDMS3, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Yang
Transistor MOSFET Array Dual N-CH 30V 54A/123A 8-Pin Power 56 T/R - Tape and Reel
***emi
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***ure Electronics
Dual N-Channel 30 V 11/4 mOhm 14/18 nC 2.2/2.5 W PowerTrench Mosfet - POWER 56-8
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
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SI4168DY-T1-GE3 N-channel MOSFET Transistor; 24 A; 30 V; 8-Pin SOIC
***ure Electronics
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*** Source Electronics
MOSFET N-CH 30V 24A 8-SOIC / Trans MOSFET N-CH 30V 24A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:24mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.0057ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1V ;RoHS Compliant: Yes
***ure Electronics
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
***ark
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:24A; On Resistance Rds(On):0.0048Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:2.2V; Threshold Voltage Vgs:2.2V Rohs Compliant: Yes
***ment14 APAC
MOSFET,N CH,30V,24A,8-SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:15.7A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
***emi
Asymmetric Dual N-Channel MOSFET, PowerTrench® Power Stage, 30V
***et Europe
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin Power 56 T/R
***ure Electronics
Trans MOSFET N-CH 30V 13A/27A 8-Pin Power 56 T/R - Tape and Reel
***nell
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***Yang
Transistor MOSFET Array Dual N-CH 30V 60A/148A 8-Pin PQFN T/R - Tape and Reel
***emi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET 30V
***ure Electronics
Dual N-Channel 30 V 11/2.8 mOhm 29/83 nC 2.2/2.5 W Mosfet - POWER 56-8
***r Electronics
Small Signal Field-Effect Transistor, 13A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronousSyncFET (Q2) have been designed to provide optimal power efficiency.
***Yang
MOSFET N-CH 30V 14A POWER56 - Bulk
***nell
MOSFET, N, SMD, MLP; Transistor Type:PowerTrench; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:14A; Resistance, Rds On:0.009ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:1.6V; Case Style:Power 56; Termination Type:SMD; Current, Idm Pulse:100A; No. of Pins:8; Power Dissipation:2.5W; SMD Marking:FDMS8690; Voltage, Vds Max:30V; Voltage, Vgs th Max:3V
***rchild Semiconductor
This device has been designed specifically to improve the efficiency of DC/DC converters. Using new techniques in MOSFET construction, the various components of gate charge and capacitance have been optimized to reduce switching losses. Low gate resistance and very low Miller charge enable excellent performance with both adaptive and fixed dead time gate drive circuits. Very low rDS(on) has been maintained to provide an extremely versatile device.
***Yang
Transistor MOSFET Array Dual N-CH 30V 60A/130A 8-Pin Power 56 T/R - Tape and Reel
***el Electronic
DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56 - More Details
***ark
DUAL N CH MOSFET, POWERTRENCH POWER STAGE, 303V, 40A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:23A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.002ohm
***rchild Semiconductor
This device includes two specialized N-Channel MOSFETs in a dual-PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
***nell
MOSFET, NN CH, ASYMMETRIC, 30V, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
モデル メーカー 説明 ストック 価格
FDMS3686S
DISTI # 27017917		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO189000
  • 6000:$0.6930
  • 3000:$0.7017
FDMS3686S
DISTI # 26657379		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO3000
  • 6000:$0.6930
  • 3000:$0.7017
FDMS3686S
DISTI # FDMS3686SCT-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5467In Stock
  • 1000:$0.7841
  • 500:$0.9463
  • 100:$1.1518
  • 10:$1.4330
  • 1:$1.6000
FDMS3686S
DISTI # FDMS3686SDKR-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFN
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5467In Stock
  • 1000:$0.7841
  • 500:$0.9463
  • 100:$1.1518
  • 10:$1.4330
  • 1:$1.6000
FDMS3686S
DISTI # FDMS3686STR-ND		ON SemiconductorMOSFET 2N-CH 30V 13A/23A 8-PQFN
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.7000
  • 3000:$0.7087
FDMS3686S
DISTI # V36:1790_06338063		ON SemiconductorDUAL N-CHANNEL POWER TRENCH MO0
    FDMS3686S
    DISTI # FDMS3686S    		ON SemiconductorTrans MOSFET N-CH 30V 13A/23A 8-Pin Power 56 T/R - Bulk (Alt: FDMS3686S)
    Min Qty: 447
    Container: Bulk    		Americas - 0
      FDMS3686S
      DISTI # FDMS3686S      		ON SemiconductorTrans MOSFET N-CH 30V 13A/23A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3686S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel      		Americas - 0
      • 30000:$0.6169
      • 18000:$0.6319
      • 12000:$0.6409
      • 6000:$0.6489
      • 3000:$0.6529
      FDMS3686S
      DISTI # 94T9988      		ON SemiconductorDUAL N-CH. ER TRENCH MO / REEL0
      • 30000:$0.6250
      • 18000:$0.6500
      • 12000:$0.6750
      • 6000:$0.7500
      • 3000:$0.7900
      • 1:$0.8400
      FDMS3686S
      DISTI # 512-FDMS3686S      		ON SemiconductorMOSFET 30V Asymmetric 2xNCh PowerTrench MOSFET
      RoHS: Compliant      		5000
      • 1:$1.4700
      • 10:$1.2500
      • 100:$1.0000
      • 500:$0.8760
      • 1000:$0.7250
      • 3000:$0.6760
      • 6000:$0.6510
      • 9000:$0.6250
      FDMS3686SON Semiconductor 
      RoHS: Not Compliant      		261000
      • 1000:$0.7400
      • 500:$0.7800
      • 100:$0.8100
      • 25:$0.8400
      • 1:$0.9100
      FDMS3686SON Semiconductor 30492
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        可用性
        ストック:
        Available
        注文中:
        1987
        数量を入力してください:
        FDMS3686Sの現在の価格は参考用です。最高の価格をご希望の場合は、お問い合わせまたは直接メールで営業チーム[email protected]までご連絡ください。
        参考価格（USD）
        量
        単価
        小計金額
        1
        $1.47
        $1.47
        10
        $1.25
        $12.50
        100
        $1.00
        $100.00
        500
        $0.88
        $438.00
        1000
        $0.72
        $725.00
        2021年から半導体が不足しているため、2021年以前の通常価格以下の価格です。お問い合わせください。
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