2SJ652-1E

Product Attribute

Attribute Value

Manufacturer:

ON Semiconductor

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-220-3

Number of Channels:

1 Channel

Transistor Polarity:

P-Channel

Vds - Drain-Source Breakdown Voltage:

60 V

Id - Continuous Drain Current:

28 A

Rds On - Drain-Source Resistance:

28.5 mOhms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

80 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

30 W

Configuration:

Single

Packaging:

Tube

Series:

2SJ652

Transistor Type:

1 P-Channel

Brand:

ON Semiconductor

Fall Time:

180 ns

Product Type:

MOSFET

Rise Time:

210 ns

Factory Pack Quantity:

50

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

310 ns

Typical Turn-On Delay Time:

33 ns

Unit Weight:

0.211644 oz

Tags

2SJ652, 2SJ65, 2SJ6, 2SJ