BSL215C H6327

Product Attribute

Attribute Value

Manufacturer:

Infineon

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TSOP-6

Number of Channels:

2 Channel

Transistor Polarity:

N-Channel, P-Channel

Vds - Drain-Source Breakdown Voltage:

20 V

Id - Continuous Drain Current:

1.5 A

Rds On - Drain-Source Resistance:

108 mOhms, 102 mOhms

Vgs th - Gate-Source Threshold Voltage:

700 mV, 1.2 V

Vgs - Gate-Source Voltage:

12 V

Qg - Gate Charge:

730 pC, - 3 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

500 mW (1/2 W)

Configuration:

Dual

Channel Mode:

Enhancement

Packaging:

Reel

Height:

1.1 mm

Length:

3 mm

Series:

BSL215

Transistor Type:

1 N-Channel, 1 P-Channel

Width:

1.5 mm

Brand:

Infineon Technologies

Forward Transconductance - Min:

4 S, 4.5 S

Fall Time:

1.4 ns, 14 ns

Product Type:

MOSFET

Rise Time:

7.6 ns, 9.7 ns

Factory Pack Quantity:

3000

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

6.8 ns, 14.5 ns

Typical Turn-On Delay Time:

4.1 ns, 6.7 ns

Part # Aliases:

BSL215CH6327XTSA1 SP001101000

Unit Weight:

0.000529 oz

Tags

BSL215CH, BSL215C, BSL215, BSL21, BSL2, BSL