APT66M60B2

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

T-MAX-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

600 V

Id - Continuous Drain Current:

70 A

Rds On - Drain-Source Resistance:

75 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

30 V

Qg - Gate Charge:

330 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

1.135 kW

Channel Mode:

Enhancement

Tradename:

POWER MOS 8

Packaging:

Tube

Height:

5.31 mm

Length:

21.46 mm

Width:

16.26 mm

Brand:

Microchip / Microsemi

Forward Transconductance - Min:

65 S

Fall Time:

70 ns

Product Type:

MOSFET

Rise Time:

85 ns

Factory Pack Quantity:

1

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

225 ns

Typical Turn-On Delay Time:

75 ns

Tags

APT66M, APT66, APT6, APT