BUR51

Product Attribute

Attribute Value

Manufacturer:

STMicroelectronics

Product Category:

Bipolar Transistors - BJT

RoHS:

Y

Mounting Style:

Through Hole

Package / Case:

TO-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

200 V

Collector- Base Voltage VCBO:

300 V

Emitter- Base Voltage VEBO:

10 V

Maximum DC Collector Current:

60 A

Gain Bandwidth Product fT:

16 MHz

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 150 C

Series:

BUR51

DC Current Gain hFE Max:

100

Height:

8.7 mm (Max)

Length:

39.5 mm (Max)

Packaging:

Tube

Width:

26.2 mm (Max)

Brand:

STMicroelectronics

Continuous Collector Current:

60 A

DC Collector/Base Gain hfe Min:

20

Pd - Power Dissipation:

350 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

20

Subcategory:

Transistors

Unit Weight:

0.225789 oz

Tags

BUR5, BUR