2N5629

Product Attribute

Attribute Value

Manufacturer:

Central Semiconductor

Product Category:

Bipolar Transistors - BJT

RoHS:

T

Mounting Style:

Through Hole

Package / Case:

TO-3-2

Transistor Polarity:

NPN

Collector- Emitter Voltage VCEO Max:

100 V

Collector- Base Voltage VCBO:

100 V

Emitter- Base Voltage VEBO:

7 V

Collector-Emitter Saturation Voltage:

2 V

Maximum DC Collector Current:

16 A

Gain Bandwidth Product fT:

1 MHz

Minimum Operating Temperature:

- 60 C

Maximum Operating Temperature:

+ 200 C

Series:

2N5629

Packaging:

Tube

Brand:

Central Semiconductor

Continuous Collector Current:

0.45 A

DC Collector/Base Gain hfe Min:

4 at 16 A, 2 V

Pd - Power Dissipation:

200 W

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

20

Subcategory:

Transistors

Part # Aliases:

2N5629 TIN/LEAD

Unit Weight:

0.225789 oz

Tags

2N5629, 2N562, 2N56, 2N5