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GS61008P-E05-MR

GS61008P-E05-MR
Mfr. #:
GS61008P-E05-MR
Manufacturer:
GaN Systems
Description:
MOSFET 100V 80A E-Mode GaN
Lifecycle:
New from this manufacturer.
Datasheet:
GS61008P-E05-MR Datasheet
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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ECAD Model:
More Information:
GS61008P-E05-MR more Information
Product Attribute
Attribute Value
Manufacturer:
GaN Systems
Product Category:
MOSFET
RoHS:
Y
Technology:
GaN
Mounting Style:
SMD/SMT
Package / Case:
GaNPX-4
Number of Channels:
1 Channel
Transistor Polarity:
N-Channel
Vds - Drain-Source Breakdown Voltage:
100 V
Id - Continuous Drain Current:
90 A
Rds On - Drain-Source Resistance:
7 mOhms
Vgs th - Gate-Source Threshold Voltage:
1.3 V
Vgs - Gate-Source Voltage:
7 V
Qg - Gate Charge:
12 nC
Minimum Operating Temperature:
- 55 C
Maximum Operating Temperature:
+ 150 C
Configuration:
Single
Channel Mode:
Enhancement
Packaging:
Reel
Height:
0.51 mm
Length:
7.5 mm
Product:
MOSFET
Series:
GS6100x
Transistor Type:
1 N-Channel
Width:
4.6 mm
Brand:
GaN Systems
Moisture Sensitive:
Yes
Product Type:
MOSFET
Factory Pack Quantity:
250
Subcategory:
MOSFETs
Part # Aliases:
GS61008P-E05-MR
Tags
GS61008P-E05, GS61008P-E0, GS61008, GS6100, GS610, GS61, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6100x 100V GaN Transistors
GaN Systems GS6100x 100V GaN Transistors are enhancement mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6100x Transistors are top-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.Learn More
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Availability
Stock:
847
On Order:
2830
Enter Quantity:
Current price of GS61008P-E05-MR is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team [email protected]
Reference price (USD)
Quantity
Unit Price
Ext. Price
1
$8.45
$8.45
10
$8.21
$82.10
25
$7.86
$196.50
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