2N4449/TR

Product Attribute

Attribute Value

Manufacturer:

Microchip

Product Category:

Bipolar Transistors - BJT

RoHS:

N

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-46-3

Transistor Polarity:

NPN

Configuration:

Single

Collector- Emitter Voltage VCEO Max:

20 V

Collector- Base Voltage VCBO:

6 V

Emitter- Base Voltage VEBO:

6 V

Collector-Emitter Saturation Voltage:

0.45 V

Minimum Operating Temperature:

- 65 C

Maximum Operating Temperature:

+ 200 C

DC Current Gain hFE Max:

120 at 100 mA, 1 V

Packaging:

Reel

Brand:

Microchip / Microsemi

DC Collector/Base Gain hfe Min:

20 at 100 mA, 1 V

Pd - Power Dissipation:

360 mW

Product Type:

BJTs - Bipolar Transistors

Factory Pack Quantity:

100

Subcategory:

Transistors

Tags

2N4449, 2N444, 2N44, 2N4