IRF6629TR1PBF

Mfr. #:: IRF6629TR1PBF
メーカー:: Infineon Technologies
説明:: MOSFET N-CH 25V 29A DIRECTFET
ライフサイクル:: メーカー新製品
データシート:: IRF6629TR1PBF データシート
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HTML Datasheet:: IRF6629TR1PBF Datasheet IRF6629TR1PBF Datasheet (P4-P6)IRF6629TR1PBF Datasheet (P7-P9)IRF6629TR1PBF Datasheet (P10)
ECAD Model:

製品属性
属性値

Tags: IRF6629, IRF662, IRF66, IRF6, IRF

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRF6629TR1PBF 説明

***et Europe: Trans MOSFET N-CH 25V 29A 7-Pin Direct-FET MX T/R

***ark: MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:23A; On Resistance, Rds(on):2.1mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:DirectFET MX ;RoHS Compliant: Yes

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 180 amperes optimized with low on resistance for applications such as active OR'ing. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number

***ment14 APAC: MOSFET, N, DIRECTFET, MX; Transistor Polarity:N Channel; Continuous Drain Current Id:29A; Drain Source Voltage Vds:25V; On Resistance Rds(on):2.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Transistor Case Style:MX; No. of Pins:5; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:1170mJ; Base Number:6629; Cont Current Id @ 70°C:23; Current Id Max:23A; Fall Time tf:7.4ns; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-40°C; Package / Case:MX; Power Dissipation Pd:2.8mW; Pulse Current Idm:230A; Rise Time:67ns; Storage Temperature Max:150°C; Storage Temperature Min:-40°C; Termination Type:SMD; Voltage Vds:25V; Voltage Vds Typ:25V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V

Market price

モデル	メーカー	説明	ストック	価格
IRF6629TR1PBF DISTI # IRF6629TR1PBFTR-ND	Infineon Technologies AG	MOSFET N-CH 25V 29A DIRECTFET RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	Limited Supply - Call
IRF6629TR1PBF DISTI # IRF6629TR1PBFCT-ND	Infineon Technologies AG	MOSFET N-CH 25V 29A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
IRF6629TR1PBF DISTI # IRF6629TR1PBFDKR-ND	Infineon Technologies AG	MOSFET N-CH 25V 29A DIRECTFET RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
IRF6629TR1PBF DISTI # 70018836	Infineon Technologies AG	25V SINGLE N-CHANNEL HEXFET POWER MOSFET,DIRECTFET MX PKG RoHS: Compliant	0	1000:$1.9300 2000:$1.7600
IRF6629TR1PBF DISTI # 942-IRF6629TR1PBF	Infineon Technologies AG	MOSFET 25V 1 N-CH HEXFET 2.1mOhms 34nC RoHS: Compliant	0
IRF6629TR1PBF	International Rectifier		559	339:$1.5840 157:$1.7760 1:$3.8400
IRF6629TR1PBF	International Rectifier		2400	834:$1.0560 482:$1.2000 1:$3.8400
IRF6629TR1PBF DISTI # 1388584	Infineon Technologies AG	MOSFET, N, DIRECTFET, MX RoHS: Compliant	0	1000:$2.2700 500:$2.4400 250:$2.7500 100:$3.0800 10:$3.8100 1:$4.6200

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