IXTH6N100D2

Product Attribute

Attribute Value

Manufacturer:

IXYS

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

Through Hole

Package / Case:

TO-247-3

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

1 kV

Id - Continuous Drain Current:

6 A

Rds On - Drain-Source Resistance:

2.2 Ohms

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

95 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

300 W

Packaging:

Tube

Height:

21.46 mm

Length:

16.26 mm

Series:

IXTH6N100

Type:

Depletion Mode MOSFET

Width:

5.3 mm

Brand:

IXYS

Forward Transconductance - Min:

2.6 S

Fall Time:

47 ns

Product Type:

MOSFET

Rise Time:

80 ns

Factory Pack Quantity:

30

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

34 ns

Typical Turn-On Delay Time:

25 ns

Unit Weight:

0.056438 oz

Tags

IXTH6N1, IXTH6N, IXTH6, IXTH, IXT