ZXMN10A11KTC

Product Attribute

Attribute Value

Manufacturer:

Diodes Incorporated

Product Category:

MOSFET

RoHS:

Y

Technology:

Si

Mounting Style:

SMD/SMT

Package / Case:

TO-252-3

Number of Channels:

1 Channel

Transistor Polarity:

N-Channel

Vds - Drain-Source Breakdown Voltage:

100 V

Id - Continuous Drain Current:

3.5 A

Rds On - Drain-Source Resistance:

350 mOhms

Vgs th - Gate-Source Threshold Voltage:

4 V

Vgs - Gate-Source Voltage:

20 V

Qg - Gate Charge:

5.4 nC

Minimum Operating Temperature:

- 55 C

Maximum Operating Temperature:

+ 150 C

Pd - Power Dissipation:

8.5 W

Configuration:

Single

Channel Mode:

Enhancement

Packaging:

Reel

Height:

2.39 mm

Length:

6.73 mm

Series:

ZXMN10A

Transistor Type:

1 N-Channel

Width:

6.22 mm

Brand:

Diodes Incorporated

Forward Transconductance - Min:

4 S

Fall Time:

3.5 ns

Product Type:

MOSFET

Rise Time:

1.7 ns

Factory Pack Quantity:

2500

Subcategory:

MOSFETs

Typical Turn-Off Delay Time:

7.4 ns

Typical Turn-On Delay Time:

2.7 ns

Unit Weight:

0.139332 oz

Tags

ZXMN10A1, ZXMN10A, ZXMN10, ZXMN1, ZXMN, ZXM